基于分离式二极管的220GHz 高效率倍频器
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1.中国工程物理研究院微系统与太赫兹研究中心;2.中国工程物理研究院电子工程研究所,四川 绵阳 621900

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High efficiency 220 GHz frequency doubler based on discrete Schottky diodes
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Affiliation:

1.Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;2.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China

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the National Key Basic Research Program of China 2015CB755406;the Defense Industrial Technology Development Program JCKY2016212C045 JCKY2017212C002Supported by the National Key Basic Research Program of China (2015CB755406), the Defense Industrial Technology Development Program (JCKY2016212C045, JCKY2017212C002)

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    摘要:

    在分离式二极管的基础上,实现了220 GHz高效率的二倍频器结构。该倍频器的电路在450 μm宽,2.7 mm长的50 μm石英基片上实现。测试结果表明,在室温下当驱动功率在46.4~164 mW时,在214~226 GHz的频段内能够实现大于16%的倍频效率。另外,当驱动功率在161 mW时,倍频器在218 GHz频点能够输出最高功率32 mW,并且在多个频点拥有高于20%的倍频效率。实验证明,所实现的二倍频器能够作为660 GHz倍频链路的驱动前级使用。

    Abstract:

    A high efficiency 220 GHz frequency doubler based on discrete diodes is presented in this paper. This doubler is realized with a 50-μm-thick, 450-μm-wide, and 2.7-mm-long quartz substrate. The conversion efficiency is better than 16% over the frequency range from 214 to 226 GHz with pumping power of 46.4~164 mW at the indoor temperature. A peak output power of 32mW at 218 GHz with an input power of 161 mW, and several frequency points with efficiency high than 20% are realized. This doubler can act as the pumping stage of the 660 GHz multiplier chain.

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田遥岭,缪丽,黄昆,蒋均,岑冀娜,郝海龙,何月.基于分离式二极管的220GHz 高效率倍频器[J].红外与毫米波学报,2019,38(4):426~432]. TIAN Yao-Ling, MIAO Li, HUANG Kun, JIANG Jun, CEN Ji-Na, HAO Hai-Long, HE Yue. High efficiency 220 GHz frequency doubler based on discrete Schottky diodes[J]. J. Infrared Millim. Waves,2019,38(4):426~432.]

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历史
  • 收稿日期:2018-12-20
  • 最后修改日期:2019-05-26
  • 录用日期:2019-02-27
  • 在线发布日期: 2019-09-06
  • 出版日期: