高边缘击穿和扩展光谱的圆形单光子雪崩二极管
投稿时间:2018-12-06  修订日期:2019-05-24  点此下载全文
引用本文:金湘亮,曾朵朵,彭亚男,杨红姣,蒲华燕,彭艳,罗均.高边缘击穿和扩展光谱的圆形单光子雪崩二极管[J].红外与毫米波学报,2019,38(4):403~407].JIN Xiang-Liang,ZENG Duo-Duo,PENG Ya-Nan,YANG Hong-Jiao,PU Hua-Yan,PENG Yan,LUO Jun.Circular single-photon avalanche diode withhigh premature edge breakdown and extended spectrum[J].J.Infrared Millim.Waves,2019,38(4):403~407.]
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作者单位E-mail
金湘亮 湘潭大学 物理与光电工程学院湖南 湘潭411105
湖南师范大学 物理与电子科学学院湖南 长沙410081 
jinxl@xtu.edu.cn 
曾朵朵 湘潭大学 物理与光电工程学院湖南 湘潭411105  
彭亚男 湘潭大学 物理与光电工程学院湖南 湘潭411105  
杨红姣 湘潭大学 物理与光电工程学院湖南 湘潭411105  
蒲华燕 上海大学 机电工程与自动化学院,上海200444  
彭艳 上海大学 机电工程与自动化学院,上海200444  
罗均 上海大学 机电工程与自动化学院,上海200444  
中文摘要:介绍了一种0.18 μm互补金属氧化物半导体(CMOS)技术的新型宽光谱荧光相关谱探测器,其为高边缘击穿、扩展光谱和低暗计数率圆形单光子雪崩二极管(SPAD)。该器件由p+/deep n-well结,p-well保护环和多晶硅保护环组成。通过Silvaco TCAD 3D器件仿真,直径为10 μm的圆形p+/deep n-well SPAD器件具有较高边缘击穿特性。此外,p+/deep n-well结SPAD比p+/n-well结SPAD具有更长的波长响应和扩展光谱响应范围。该器件在0.5 V过量偏压下,可在490~775 nm波长范围内实现超过40%的光子探测率。该圆形p+/deep n-well SPAD器件在25℃时具有较好雪崩击穿为15.14 V,具有较低暗计数率为638 Hz。
中文关键词:单光子雪崩二极管(SPAD)  边缘击穿  暗计数率  光谱扩展
 
Circular single-photon avalanche diode withhigh premature edge breakdown and extended spectrum
Abstract:This paper presents a 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology high premature edge breakdown, extended spectrum and low dark count rate circular single-photon avalanche diode (SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy (FCS) detector. The circular device consists of a p+/deep n-well junction, a p-well guard-ring, and a poly guard-ring. Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p+/deep n-well SPAD device has high premature edge breakdown characteristics. Moreover,compared to the SPAD p+/n-well junction, the p+/deep n-well junction has a longer wavelength response and spectral expansion. The device achieves wide spectral sensitivity enabling greater than 40% photon detection probability from 490 to 775 nm wavelength at 0.5 V excess bias. The circular p+/deep n-well SPAD has fine avalanche breakdown is 15.14 V and a low dark count rate of 638 Hz at 25℃.
keywords:single-photon avalanche diode(SPAD)  premature edge breakdown (PEB)  dark count rate(DCR)  spectral expansion
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