(英)数字递变异变赝衬底上2.6 μm In0.83Ga0.17As/InP光电探测器的性能改进
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中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室

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国家重点基础研究发展计划(973计划)


Improved performances of 2.6 μm In0.83Ga0.17As/InP photodetectors on digitally-graded metamorphic pseudo-substrates
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State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

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    摘要:

    本文研究了In0.83Al0.17As/In0.52Al0.48As数字递变异变缓冲层结构(DGMB)的总周期数对2.6 μm延伸波长In0.83Ga0.17As光电二极管性能的影响。实验表明,在保持总缓冲层厚度不变的情况下,通过将在InP衬底上生长的In0.83Al0.17As/In0.52Al0.48As DGMB结构的总周期数从19增加到38,其上所生长的In0.83Ga0.17As/In0.83Al0.17As光电二极管材料层的晶体质量得到了显著改善。对于在总周期数为38的DGMB上外延的In0.83Ga0.17As光电二极管,观察到其应变弛豫度增加到99.8%,表面粗糙度降低,光致发光强度和光响应度均增强,同时暗电流水平被显著抑制。这些结果表明,随着总周期数目的增加,DGMB可以更有效地抑制穿透位错的传递并降低残余缺陷密度。

    Abstract:

    Impacts of the total period number for the In0.83Al0.17As/In0.52Al0.48As digitally-graded metamorphic buffer (DGMB) on the performances of 2.6 μm In0.83Ga0.17As photodiodes (PDs) have been investigated. An increase of the total period number from 19 to 38 for the In0.83Al0.17As/In0.52Al0.48As DGMB with the same thickness has shown improved crystal qualities for the In0.83Ga0.17As/In0.83Al0.17As photodiode layers grown on such pseudo-substrates. An increased strain relaxation degree up to 99.8%, a reduced surface roughness, enhanced photoluminescence intensities as well as photo responsivities, and suppressed dark currents are observed simultaneously for the In0.83Ga0.17As photodiode on the DGMB with a period number of 38. These results suggest that with more periods, DGMB can restrain the transmission of the threading dislocations more efficiently and reduce the residual defect density.

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师艳辉,马英杰,顾溢,陈星佑,杨楠楠,龚谦,张永刚.(英)数字递变异变赝衬底上2.6 μm In0.83Ga0.17As/InP光电探测器的性能改进[J].红外与毫米波学报,2019,38(3):275~280]. SHI Yan-Hui, MA Ying-Jie, GU Yi, CHEN Xing-You, YANG Nan-Nan, GONG Qian, ZHANG Yong-Gang. Improved performances of 2.6 μm In0.83Ga0.17As/InP photodetectors on digitally-graded metamorphic pseudo-substrates[J]. J. Infrared Millim. Waves,2019,38(3):275~280.]

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  • 收稿日期:2018-10-24
  • 最后修改日期:2019-01-07
  • 录用日期:2019-01-17
  • 在线发布日期: 2019-07-02
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