InAs基中红外带间级联激光器中的自加热效应
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1.中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083;2.中国科学院大学,北京 100049;3.上海科技大学 物质科学与技术学院,上海 201210

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The effects of self-heating on mid-IR interband cascade lasers grown on InAs substrates
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1.Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics;Chinese Academy of Sciences, Shanghai 200083, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.School of Physical Science and Technology, University of ShanghaiTech, Shanghai 201210, China

Fund Project:

National Natural Science Foundation of China 61534006 61290302 61505237 61404148;the National Key Research and Development Program of China 2016YFB0402403Supported by National Natural Science Foundation of China( 61534006, 61290302, 61505237, 61404148 ), and the National Key Research and Development Program of China( 2016YFB0402403)

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    摘要:

    制备并测试了II型中红外带间级联激光器,制备的器件在脉冲和连作模式下最高工作温度分别为275 K和226 K。80 K下器件激射波长为3.8 μm左右,阈值电流密度约17 A/cm2。对器件在连续工作模式下的自加热效应进行了分析,并利用有限元方法模拟了器件连续工作时的温度分布图。分析和模拟结果均表明自加热效应是限制器件连续工作温度的重要因素,进一步提升散热性能将是进一步提升器件工作温度的有效手段。

    Abstract:

    In this paper, InAs-based type-II interband cascade lasers operating at the mid-infrared range were fabricated and characterized. The maximum operating temperatures under pulsed and continuous wave (CW) operating mode were determined to be 275 K and 226 K, respectively. The threshold current density was around 17 A/cm2 at 80 K with an emission wavelength of approximate 3.8 μm. We analyzed the self-heating effects under CW mode and further simulated the temperature contour by the finite element method. The results indicate that the self-heating effect is a critical factor that limits the operating temperature under CW mode for our devices. Further optimization of the heat dissipation performance would be an effective way to raise the operating temperature of the devices.

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引用本文

余成章,徐志成,陈建新,何力. InAs基中红外带间级联激光器中的自加热效应[J].红外与毫米波学报,2019,38(4):408~411]. YU Cheng-Zhang, XU Zhi-Cheng, CHEN Jian-Xin, HE Li. The effects of self-heating on mid-IR interband cascade lasers grown on InAs substrates[J]. J. Infrared Millim. Waves,2019,38(4):408~411.]

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  • 收稿日期:2018-08-30
  • 最后修改日期:2019-05-24
  • 录用日期:2019-04-01
  • 在线发布日期: 2019-09-06
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