p-well/DNW单光子雪崩二极管保护环的最小化设计
投稿时间:2017-09-26  修订日期:2018-04-15  点此下载全文
引用本文:杨红姣,金湘亮.p-well/DNW单光子雪崩二极管保护环的最小化设计[J].红外与毫米波学报,2018,37(5):527~532].YANG Hong-Jiao,JIN Xiang-Liang.Minimization design of guard ring size of p-well/DNW single photon avalanche diode[J].J.Infrared Millim.Waves,2018,37(5):527~532.]
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作者单位E-mail
杨红姣 湘潭大学 物理与光电工程学院 yanghongjiao2004@xtu.edu.cn 
金湘亮 湘潭大学 物理与光电工程学院 jinxl@xtu.edu.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:随着CMOS工艺特征尺寸的不断减小,探测器本身的大小成为进一步缩小CMOS单光子雪崩二极管(SPAD)阵列的障碍。为了进一步缩小SPAD探测器的尺寸,基于0.18 μm CMOS 图像传感器(CIS)工艺对p-well/DNW(deep n-well)SPAD的保护环尺寸进行设计,并制造了不同保护环尺寸的SPAD器件。测试结果表明,保护环尺寸减小到0.4 μm仍然能有效防止器件发生过早边缘击穿(PEB),且保护环尺寸大于0.4 μm的SPAD器件雪崩击穿电压为16 V,并表现出良好的雪崩击穿特性。此外,保护环尺寸对p-well/DNW SPAD器件的暗计数(DCR)和光子探测概率(PDP)影响较小,直径为20 μm的SPAD器件,温度为25 ℃时暗计数率为638 Hz,且波长为530 nm时峰值光子探测概率为16%,具有低的暗计数率特性和宽的光谱响应特性。
中文关键词:单光子雪崩二极管(SPAD)  边缘击穿(PEB)  暗计数(DCR)  光子探测概率(PDP)  互补金属氧化物半导体(CMOS)
 
Minimization design of guard ring size of p-well/DNW single photon avalanche diode
Abstract:As CMOS technology scales down, the size of the detector itself becomes an impediment to the further scaling of CMOS single photon avalanche diode (SPAD) arrays. In order to further scale the SPAD detector, the guard ring size of p-well/DNW (deep n-well) SPAD was designed, and SPADs with varied guard ring sizes were fabricated in a 0.18 μm CMOS Image Sensor (CIS) technology. The measured results show that, the guard ring with its size decreased to 0.4 μm is effective in preventing premature edge breakdown (PEB), and SPADs with guard ring size more than 0.4 μm exhibit good avalanche breakdown characteristics with a breakdown voltage of 16 V. Moreover, the guard ring size does not have a significant impact on the dark count rate (DCR) and the photon detection probability (PDP) of p-well/DNW SPADs, and the SPADs for 20 μm diameter active area structure achieve a low DCR of 638 Hz at 25 ℃ and a broader spectral response with a PDP peak of 16% at 530 nm.
keywords:single photon avalanche diode (SPAD), premature edge breakdown (PEB), dark count rate (DCR), photon detection probability (PDP), complementary metal oxide semiconductor (CMOS).
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