(英)InP HEMTs器件16参数小信号模型
投稿时间:2017-09-17  修订日期:2017-10-28  点此下载全文
引用本文:李凯凯,李梦珂,王文斌,孙树祥,钟英辉,丁鹏,金智.(英)InP HEMTs器件16参数小信号模型[J].红外与毫米波学报,2018,37(2):163~167].LI Kai-Kai,Li Meng-Ke,WANG Wen-Bin,Sun Shu-Xiang,ZHONG Ying-Hui,Ding Peng,Jin Zhi.An improved 16-element small-signal model for InP-based HEMTs[J].J.Infrared Millim.Waves,2018,37(2):163~167.]
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作者单位E-mail
李凯凯 郑州大学物理工程学院 15639730406@163.com 
李梦珂 郑州大学 物理工程学院  
王文斌 郑州大学 物理工程学院  
孙树祥 郑州大学 物理工程学院  
钟英辉 郑州大学 物理工程学院 zhongyinghui401@163.com 
丁鹏 中国科学院微电子研究所  
金智 中国科学院微电子研究所  
中文摘要:在本文中,提出一种改进后适用于InAlAs/InGaAs InP-based HEMTs的小信号拓扑结构。拓扑结构中引入栅源电阻(Rgs)去表征因栅短引起的栅泄漏电流效应。另外还引入表征漏端延时特性的输出跨导(gds)描述漏端电压对沟道电流的影响以及漏源电容(Cds)的变化已改善S22参数拟合差的问题。外围寄生参数通过open和short拓扑结构计算得出,本征部分利用去除外围寄生参数后的Y参数计算得出,最终参数值是经过优化以达到最佳拟合状态而确定。最终,仿真的s参数和频率特性和测试数据拟合程度很好,Rgs和τds的引入降低了模型误差。准确适用的InP HEMTs小信号模型对于高频电路设计非常重要。
中文关键词:InP-based HEMT,小信号模型,栅泄漏电流,漏端延时
 
An improved 16-element small-signal model for InP-based HEMTs
Abstract:In this paper, an improved 16-element small-signal topology has been proposed for InAlAs/InGaAs InP-based HEMTs. The resistance of gate-leakage current (Rgs) is adopted to depict the gate-leakage current caused by short gate-channel distance. The output conductance (gds) with drain delay factor (τds) is proposed to characterize the impact of drain voltage on channel current and also the phase change by drain-source capacitor (Cds), which thus improves the fitting accuracy of S22. The parasitic elements are calculated through open and short dummy structures, and the intrinsic parameters are extracted by Y-parameters after de-embedding the external parasitic parameters. The ultimate values of parameters are determined by optimization procedure to gain the best fitting precision. Finally, the simulated S-parameters and frequency characteristics have shown good match with the measured values, and the introduction of Rgs and τds leads to smaller error factor (perror). The accurate and suitable small-signal model for InP-based HEMTs would be of great significance on design of high-frequency circuits.
keywords:InP-based  HEMTs,small-signal  model,gate-leakage  current,drain  delay
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