GaN基肖特基器件中的反常电容特性
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ANOMALOUS CAPACITANCE OF GaNBASED SCHOTTKY DIODES
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    摘要:

    〗研究了测试频率为0.3~1.5MHz时GaN基肖特基器件的电容特性.实验发现,在Au/iGaN肖特基器件的电容电压(CV)特性曲线中,出现了峰和负值电容,而Au/iAl0.45Ga0.55N肖特基器件的CV特性曲线中则既没有峰也没有负值电容的出现.对肖特基器件的电流电压(IV)特性和CV特性进行参数提取和分析后认为,负值电容和峰的出现源于界面态的俘获和损耗,但较大的串联电阻将减弱界面态的作用.

    Abstract:

    The capacitancevoltage (CV) measurements of GaNbased Schottky diodes were carried out in the frequency range of 0.3~1.5MHz. Anomalous peaks and negative value of capacitance were observed in the CV plots of Au/iGaN Schottky diodes under forward bias, while neither of them was seen in the plots of Au/iAl0.45Ga0.55N Schottky diodes. Based on the parameters extracted from the currentvoltage (IV) and CV plots of GaN and Al0.45Ga0.55N Schottky diodes, the peak and negative capacitance are ascribed to the capture and loss of interface charges. These processes are greatly suppressed when there exists a huge series resistance in the diode.

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储开慧,张文静,许金通,李向阳. GaN基肖特基器件中的反常电容特性[J].红外与毫米波学报,2010,29(3):161~166]. CHU Kai-Hui, ZHANG Wen-Jing, XU Jin-Tong, LI Xiang-Yang. ANOMALOUS CAPACITANCE OF GaNBASED SCHOTTKY DIODES[J]. J. Infrared Millim. Waves,2010,29(3):161~166.]

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  • 收稿日期:2009-08-07
  • 最后修改日期:2009-08-07
  • 录用日期:2009-09-14
  • 在线发布日期: 2010-07-19
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