In order to investigate the electrical properties of InAs/GaSb type-II superlattices, a lattice-matched AlAsSb electrical isolation layer was grown between the GaSb substrate and the InAs/GaSb type-II superlattice epitaxial material to suppress the conductive effect of the substrate. Temperature-dependent Hall measurements revealed that the undoped superlattice exhibited N-type conductivity. As the P-type doping concentration increased, a compensation doping phenomenon was observed, with the occurrence of conductivity type transitions at 95 K and 230 K, respectively. Below the transition temperatures, P-type conductivity was exhibited, while above the transition temperatures, the material exhibited N-type conductivity. The phenomenon was analyzed using the Fermi level model, and the results indicated that the transition temperature for conductivity type changes increased with increasing doping concentration.