We present the design， simulation， and experimental validation of an InP/In_0.53Ga_0.47As laser power converter for the wavelength of 1 550 nm. By optimizing the thickness of the absorption layer and adopting a dual-layer anti-reflective structure （SiO₂ and SiN）， the device achieves an absorptance of 96% under 1 550 nm laser irradiation， demonstrating insensitivity to angle variation and robust to wavelength shifts. The experimental results are in good agreement with the theoretical calculation results. The external quantum efficiency （EQE） reaches 92%. Under a laser power density of 47 mW/cm2， the cell’s conversion efficiency reaches 23%. Theoretical analysis reveals that the main reason for the experimental results being lower than the theoretical predicted values is that the sample devices have a relatively high series resistance and a relatively low parallel resistance. Further refinement of device processing is needed to reduce series and shunt resistances， thereby enhancing the overall efficiency of the laser photovoltaic cell. In addition， this study delves into the impact of cell area on the photovoltaic performance， providing optimization directions for the miniaturization of laser photovoltaic cells.