基于薄膜铌酸锂实现高偏振消光比
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作者单位:

1.中国科学院大学,北京100049;2.中国科学院半导体研究所 光电子材料与器件重点实验室,北京100083;3.北京怀柔仪器和传感器有限公司,北京101400

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TN29

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High polarization extinction ratio achieved base on thin-film lithium niobate
Author:
Affiliation:

1.University of Chinese Academy of Sciences, Beijing 100049, China;2.Key Laboratory of Optoelectronics Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Beijing Huairou Instruments and Sensors Co, Ltd, Beijing 101400, China

Fund Project:

Supported by Beijing Natural Science Foundation (4242062) and the Youth Innovation Promotion Association, CAS (2021108)

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    摘要:

    本文介绍了一种通过在铌酸锂薄膜平台上使用亚波长光栅结构实现高偏振消光比的方法,并在铌酸锂薄膜的表面形成了芯片。该芯片的长度仅为20,在1 550 nm波长下测得的偏振消光比为29 dB。这一进展不仅证明了在铌酸锂薄膜平台上实现高偏振消光比的可能性,而且为未来在偏振分束器、集成光纤陀螺仪等方面的工作提供了重要的技术参考。

    Abstract:

    This article introduces a method of achieving high polarization extinction ratio using a subwavelength grating structure on a lithium niobate thin film platform, and the chip is formed on the surface of the lithium niobate thin film. The chip, with a length of just 20 μm, achieved a measured polarization extinction ratio of 29 dB at 1 550 nm wavelength. This progress not only proves the possibility of achieving a high extinction ratio on a lithium niobate thin film platform, but also offers important technical references for future work on polarization beam splitters, integrated fiber optic gyroscopes, and so on.

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杨永康,郭宏杰,陈文彬,屈柏昂,于治国,谭满清,郭文涛,刘海峰.基于薄膜铌酸锂实现高偏振消光比[J].红外与毫米波学报,2024,43(6):827~831]. YANG Yong-Kang, GUO Hong-Jie, CHEN Wen-Bin, QU Bai-Ang, YU Zhi-Guo, TAN Man-Qing, GUO Wen-Tao, LIU Hai-Feng. High polarization extinction ratio achieved base on thin-film lithium niobate[J]. J. Infrared Millim. Waves,2024,43(6):827~831.]

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  • 收稿日期:2024-03-22
  • 最后修改日期:2024-11-08
  • 录用日期:2024-05-13
  • 在线发布日期: 2024-11-06
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