This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all sample was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections. The calculation results show that the Sb component is 0.6 in the InAsxSb1-x thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3, which has the highest electron mobility (28560 cm2/V·s) at 300 K. At the same time, the influence of V/III ratio on the transport properties and crystal quality of Al0.2In0.8Sb/InAsxSb1-x quantum well heterostructures also has been investigated. As a result, the Al0.2In0.8Sb/InAs0.4Sb0.6 quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm2/V·s and a minimum RMS roughness of 0.68 nm. Through optimizing the growth conditions, our samples have higher electron mobility and smoother surface morphology.