基于InAs/GaAsSb 超晶格的中红外波导探测器结构设计
DOI:
作者:
作者单位:

1.国科大杭州高等研究院;2.国科大杭州高等研究院,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室

作者简介:

通讯作者:

中图分类号:

基金项目:

国家自然科学基金(61904183,61974152,62104237,62004205),中国科学院青年创新促进会会员资助(Y202057),上海市科技启明星计划(20QA1410500),上海市扬帆计划(21YF1455000)


Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice
Author:
Affiliation:

1.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences;2.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Fund Project:

National Natural Science Foundation of China(NSFC) (61904183, 61974152, 62104237, 62004205), the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057), Shanghai Science and Technology Committee Rising-Star Program(20QA1410500), Shanghai Sail Plans(21YF1455000)

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    在近红外领域,已经利用片上波导和谐振器实现了分子的光谱检测。然而在中红外波段,许多传感器仍使用芯片外光源和探测器,这限制了化学传感芯片的集成度和灵敏度。本文设计了一种 InAs/GaAsSb 超晶格中红外波导集成探测器,采用 GaAsSb 作为中红外波导,波导层和 InAs/GaAsSb 超晶格吸收层之间采用倏逝波耦合方式,可以实现低损耗和高响应度的中红外光探测。对器件的光电特性进行了模拟,着重分析了 InAs/GaAsSb 超晶格光电探测器与 GaAsSb 波导集成的影响因素,得到了吸收区的最优厚度和长度,噪声等效功率最低的情况下,量子效率可以达到68.9%。基于Ⅲ-Ⅴ族材料的波导探测器更容易集成中红外光源,实现中红外的片上集成光电检测芯片。

    Abstract:

    In the near-infrared, spectroscopic detection of molecules has been achieved using on-chip waveguides and resonators. However, in the mid-infrared band, many sensors still rely on off-chip light sources and detectors, which limit the integration and sensitivity of chemical sensing chips. Here, we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector. The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are coupled via the evanescent coupling, enabling low-loss and high-performance mid-infrared light detection. We simulated the photoelectricity characteristics of the device, analyzed the factors influencing the integration of the InAs/GaAsSb superlattice photodetector and the GaAsSb waveguide. Optimal thicknesses and lengths for the absorption layer are determined. With minimal noise equivalent power, the quantum efficiency can reach 68.9%. The waveguide detector based on Ⅲ-V materials is easier to integrate mid-infrared light source and realize the on-chip photoelectric detection chip.

    参考文献
    相似文献
    引证文献
引用本文
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2023-10-20
  • 最后修改日期:2023-11-16
  • 录用日期:2023-12-01
  • 在线发布日期:
  • 出版日期: