1.School of Integrated Circuits, University of Chinese Academy of Sciences;2.School of Microelectronics, University of Science and Technology of China;3.Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences;4.Research Center, HuBei Jiufengshan Laboratory
Supported by the National Natural Science Foundation of China (61971395)
针对侧栅结构高电子迁移率晶体管(High Electron Mobility Transistors, HEMTs)太赫兹探测器，构建了器件的直流输运和太赫兹探测的物理模型。运用自对准工艺，成功制备了形态良好、接触可靠的侧栅结构，有效地解决了器件双侧栅与台面间的接触问题，最终获得了不同栅宽（200 nm、800 nm和1400 nm）的侧栅GaN/AlGaN HEMT太赫兹探测器。通过直流测试表征发现不同器件的栅宽与其阈值电压之间呈现出明显的线性关系，验证了侧栅结构HEMT太赫兹探测器的直流输运模型。上述结果为完整的侧栅HEMT太赫兹探测器的理论模型提供了实验验证和指导，为侧栅HEMT太赫兹探测器的发展提供了重要支持。
For the high-electron-mobility transistor(HEMT) terahertz detector with a side-gate structure, a physical model for DC transport and terahertz detection of the device was constructed. Using a self-alignment process, well-shaped and reliable contacts for the side-gate structure were successfully fabricated, effectively solving contact issues between the dual gates and the mesa. Ultimately, terahertz detectors with different gate widths(200 nm, 800 nm, and 1400 nm) of side-gate GaN/AlGaN HEMTs were obtained. DC tests revealed a clear linear relationship between the gate width of different devices and their threshold voltage, confirming the DC transport model of the side-gate HEMT terahertz detector. These results provide experimental verification and guidance for the theoretical model of the complete side-gate HEMT terahertz detector, offering significant support for the development of side-gate HEMT terahertz detectors.