12.5微米1024×1024长波InAs/GaSb II类超晶格红外焦平面探测器
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上海技术物理研究所

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InAs/GaSb, Superlattice, Long Wavelength, Focal Plane Array
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Shanghai Institute of Technical Physics

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    摘要:

    本文报道了12.5微米的InAs/GaSb II类超晶格长波红外焦平面探测器。实验采用分子束外延技术在GaSb衬底上生长超晶格材料。吸收区超晶格结构为15ML(InAs)/7ML(GaSb)。探测器采用PBπBN的双势垒结构以抑制长波探测器暗电流。研制了规模为1024×1024,像元中心距为18×18μm的长波焦平面探测器。采用金属杜瓦封装,与制冷机耦合形成超晶格长波探测器制冷组件。在60K温度下测试了探测器各项性能。探测器50%截止波长为12.5微米,平均峰值探测率达到6.6×1010cmHz1/2W-1,盲元率为1.05%,噪声等效温差NETD为21.2mK。红外焦平面成像测试得到清晰的长波成像。

    Abstract:

    In this paper, we report research results of 12.5μm long-wavelength infrared InAs/GaSb superlattice focal plane arrays. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy ( MBE) technology. The respective structure of absorption region is 15ML ( InAs) /7ML ( GaSb). The detector adopts PB-πBN double barrier structure to suppress the dark current. A long-wave focal plane detector with the size of 1024×1024 and the pixel center-to-center distance of 18×18μm was developed. The detector is packaged by a metal dewar, and a superlattice long-wavelength detector cryocooler assembly is formed by coupling with a refrigerator. At 60 K measurement, the detector has 50% cut-off wavelength of 12.5μm, The detector has a peak detectivity of 6.6×1010cmHz1/2W-1 , dead pixels rate of 1.05% and a noise equivalent temperature difference (NETD) is 21.2mK. Infrared images of this detector has been taken using infrared imaging test.

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  • 收稿日期:2023-09-19
  • 最后修改日期:2023-09-21
  • 录用日期:2023-09-27
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