改进碲镉汞液相外延方法原位生长正组分梯度薄膜材料
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中国科学院上海技术物理研究所

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国家自然科学基金国家重大科研仪器研制项目(12227901)


Improved liquid phase epitaxy method for in-situ growth of HgCdTe with positive composition gradient
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Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    摘要:

    研究了液相外延生长条件对碲镉汞薄膜材料组分梯度的影响,建立了指导液相外延生长的理论模型。通过改变水平推舟液相外延工艺的汞损失速率,生长出具有正组分梯度的碲镉汞薄膜材料。针对这种特定条件下生长的碲镉汞外延薄膜,通过腐蚀减薄光谱测试与二次离子质谱测试证实了材料具有正组分梯度结构。与传统方法生长的具有负组分梯度的碲镉汞薄膜相比,这种薄膜材料具有相近的表面形貌与红外透射光谱曲线;且具有较高的晶体质量,其X射线衍射双晶摇摆曲线半峰宽达到28.8arcsec。

    Abstract:

    The influence of growth conditions of liquid phase epitaxy on the composition gradient of HgCdTe was studied, and the growth model of liquid phase epitaxy of HgCdTe was established. HgCdTe with positive composition gradient was grown by slider liquid phase epitaxy by changing the mercury loss rate. The positive composition gradient structure of HgCdTe grown under the growth condition of specific mercury loss was confirmed by corrosion thinning spectrum and secondary ion mass spectrometry (SIMS). The experimental results show that the HgCdTe with positive composition gradient had the similar surface morphology and infrared transmission spectrum curve to the traditional HgCdTe with negative composition gradient; and it had high crystal quality,? with a full width at half maximum (FWHM) of X-ray diffraction(XRD)double-crystal rocking curve of 28.8 arcsec.

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  • 收稿日期:2023-09-11
  • 最后修改日期:2023-10-13
  • 录用日期:2023-10-23
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