Hg0.72Cd0.28Te扫描隧道谱的模型解释
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作者单位:

1.上海大学 理学院物理系;2.中国科学院上海技术物理研究所;3.上海大学理学院物理系

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国家自然科学基金项目(面上项目,重点项目,重大项目)


The scanning tunneling spectra of Hg0.72Cd0.28Te and the model interpretation
Author:
Affiliation:

1.Dept of Physics,Shanghai University;2.Shanghai Institute of Technique Physics, Chinese Academy of Sciences;3.中国科学院上海技术物理研究所;4.Physics Dept. Shanghai University

Fund Project:

National natural science foundation

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    摘要:

    本工作应用截面扫描隧道显微镜(XSTM)在室温下研究了分子束外延生长的Hg0.72Cd0.28Te薄膜。扫描隧道谱(STS)测量显示, 此碲镉汞材料的电流-电压(I/V)隧道谱呈现的零电流平台宽度(隧道谱表观带隙)比其实际材料带隙增大约130%,说明存在明显的针尖诱导能带弯曲(TIBB)效应。应用扫描隧道谱三维TIBB模型计算,发现低成像偏压测量时获取的I/V隧道谱数据与理论计算结果有令人满意的一致性。然而较大成像偏压时所计算的I/V谱与实验谱线在较大正偏压区域存在一定偏离。这是由于目前的TIBB模型未考虑带带隧穿,缺陷辅助隧穿等碲镉汞本身的输运机制对隧道电流的影响造成的。

    Abstract:

    The cross-sectional scanning tunneling microscopy (XSTM) technique was used to study the cleaved surface of Hg0.72Cd0.28Te grown by molecular beam epitaxy. Scanning tunnel spectroscopy (STS)’s measurements show that the width of zero current plateau (the apparent tunneling gap) of current-voltage (I/V) spectra is about 130% larger than the practical band gap of the material, implying the existence of obvious tip-induced band bending (TIBB) effect with the measurement. Based on the 3D TIBB model, the STS data can however be interpreted and the calculated I/V spectra are in good agreement with the measurement. Nevertheless, certain deviation appears for those I/V data which were acquired with a large imaging bias, e.g. 1.6 V. This is because the current TIBB model does not taken into account the transport mechanism of the material itself, for which the band-to-band tunneling, trap assisted tunneling etc. could be non-negligible factors for the tunneling.

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  • 收稿日期:2023-08-31
  • 最后修改日期:2023-10-28
  • 录用日期:2023-11-03
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