基于 InSe/MoTe2 异质结构的超灵敏宽光谱光电探测器
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1.北京工业大学 微电子学院 光电子技术教育部重点实验室;2.中国科学院 苏州纳米技术与纳米仿生研究所 纳米加工平台;3.长春理工大学 高功率半导体激光国家重点实验室,长春

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国家自然科学基金项目(No. 60908012, 61575008, 61775007, 61874145, 62074011, 62134008),国家重点研发计划(No.2018YFA0209000,2021YFC2203400,2021YFA1200804),北京市自然科学基金(No.4172011,4202010),北京Nova计划(Z201100006820096)


Ultrasensitive and Broad-Spectrum Photodetectors Based on InSe/MoTe2 Heterostructure
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Affiliation:

1.Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics,Beijing University of Technology;2.Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences;3.State key Laboratory of High Power semiconductor laser of Changchun University of Science and Technology,changchun,China

Fund Project:

The National Natural Science Foundation of China (No. 60908012, 61575008, 61775007, 61874145, 62074011, 62134008)、National Key Research and Development Program of China (No.2018YFA0209000,2021YFC2203400,2021YFA1200804)、 the Beijing Natural Science Foundation (No.4172011,4202010)、 Beijing Nova Program (Z201100006820096)

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    摘要:

    基于光栅效应的二维材料垂直结构可实现高灵敏度和宽光谱光探测器。本文报告了一种基于硒化铟(InSe)/二碲化钼(MoTe2)垂直异质结构的高灵敏度光电探测器,该探测器在 365 - 965 nm 波长范围内具有出色的宽光谱探测能力。顶层的InSe用作调节沟道电流的光栅层,MoTe2 则用作传输层。通过结合两种材料的优势,该光电探测器的响应时间为 21.6 ms,比探测率在365nm光照下可以达到1.05 × 10^13 Jones,在965nm光照下也可达到109Jones数量级。外量子效率可达 1.03 × 10^5%,显示出强大的光电转换能力。

    Abstract:

    The grating effect based on the vertical structure of a two-dimensional material allows high-sensitivity and broad-spectrum photodetector. In this paper, a high-sensitivity photodetector based on the vertical heterostructure of indium selenide (InSe)/molybdenum ditelluride (MoTe2) is reported, which exhibits excellent broad-spectrum detection capability from 365 to 965 nm. The top layer of InSe is used as the grating layer to regulate the channel current, and MoTe2 is used as the transmission layer. By combining the advantages of the two materials, the photodetector has a fast response time of 21.6 ms and achieves a maximum detectivity of 1.05 × 10^13 Jones under 365 nm laser irradiation. Under the illumination of 965nm, the detectivity still achieves the order of 10^9 Jones. In addition, The InSe/MoTe2 heterostructure exhibits an external quantum efficiency of 1.03 × 10&5%, which demonstrates a strong photoelectric conversion capability.

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  • 收稿日期:2023-07-24
  • 最后修改日期:2023-08-29
  • 录用日期:2023-09-01
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