碲镉汞 PIN结构雪崩器件的I区材料晶体质量研究
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红外材料与器件重点实验室,上海技术物理研究所

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Study on I Layer of APD P-I-N HgCdTe
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Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences

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    摘要:

    本文对中波PIN结构的碲镉汞(HgCdTe)雪崩器件的关键雪崩区域的材料晶体质量进行研究。通过在实验材料上对PIN结构雪崩器件的全过程工艺模拟,并采用微分霍尔、微分少子寿命等测试手段进行材料表征,评估获得了关键雪崩区域的真实材料晶体质量。研究发现,现有优化工艺下雪崩区域的晶体质量良好,拟合材料的SRH寿命最好能达到20.7us,能达到原生材料的SRH寿命相当水平,满足高质量中波碲镉汞雪崩器件的研制要求。同时,我们以获得的雪崩区域SRH寿命为基础,对HgCdTe APD结构器件进行相应2维数值模拟,获得理论最优的暗电流密度达到8.7×10-10A/cm2

    Abstract:

    In this paper, the crystal quality of materials in key avalanche region of Mercury Cadmium telluride (HgCdTe) avalanche photodiode detector(APD) with medium wave PIN structure is studied. By simulating the entire process of the PIN APD device on the experimental material, and using differential Hall and differential minority lifetime test to characterize the material, the real crystal quality of the key avalanche area was evaluated. It is found that the crystal quality of the avalanche region under the optimized process is good, and its SRH lifetime can reach 20.7μs, which can reach the SRH lifetime of the primary material. This meets the development requirements of high quality medium-wave mercury cadmium telluride avalanche devices. At the same time, based on the obtained SRH lifetime in the avalanche region, we conducted corresponding two-dimensional numerical simulations on HgCdTe APD structural devices to obtain the theoretically optimal dark current density of 8.7×10-10A/cm2.

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  • 收稿日期:2023-07-17
  • 最后修改日期:2023-08-14
  • 录用日期:2023-08-21
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