非制冷势垒型InAsSb基高速中波红外探测器
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作者单位:

1.中国科学院半导体研究所 半导体照明研发中心;2.昆明物理研究所;3.陆装驻重庆军代局驻昆明地区第一军代室

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中图分类号:

O43

基金项目:

国家自然科学基金(62174156)


Uncooled InAsSb-based high-speed mid-wave infrared barrier detector
Author:
Affiliation:

1.Solid-State Lighting R&2.D Center,Institute of Semiconductors,Chinese Academy of Sciences;3.Kunming Institute of Physics;4.The first military representative office in Kunming area of the Military Representative Bureau of Land Forces in Chongqing

Fund Project:

National Natural Science Foundation of China (No. 62174156)

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    摘要:

    高速响应的中波红外探测器在自由空间光通信和频率梳光谱学等新兴领域的需求逐渐增加。中长波XBnn势垒型红外光探测器对暗电流等散粒噪声具有抑制作用。在GaSb衬底上采用分子束外延生长了nBn和pBn两种结构的InAsSb/AlAsSb/AlSb中波红外光探测器,通过微纳加工工艺制备了可用于射频响应特性测试的GSG探测器。XRD和AFM的结果表示两种结构的外延片都具有较好的晶体质量。探测器的暗电流测试结果表明,在室温和反向偏压400mV工作时,直径90 μm的pBn器件相较于nBn器件表现出更低的暗电流密度0.145 A/cm2,说明了该器件在室温非制冷环境下表现出低噪声。不同台面直径的探测器的暗电流测试表明,pBn器件的表面电阻率约为1.7×104 Ω.cm,对照的nBn器件的表面电阻率为3.1×103 Ω.cm,而pBn和nBn的R0A体积项的贡献分别为16.60 Ω.cm25.27 Ω.cm2。探测器的电容测试结果表明,可零偏压工作的pBn探测器具有完全耗尽的势垒层和部分耗尽的吸收区,nBn的吸收区也存在部分耗尽。探测器的射频响应特性表明,直径90 μm的pBn器件的响应速度在室温和3V反向偏压下可达2.62 GHz,对照的nBn器件的响应速度仅为2.02 GHz,相比提升了29.7%。初步实现了在中红外波段下可快速探测的室温非制冷势垒型光探测器。

    Abstract:

    The demand for high-speed response mid-wave infrared (MWIR) photodetectors (PDs) is gradually increasing in emerging fields such as free-space optical communication and frequency comb spectroscopy. The XBnn barrier infrared photodetectors greatly suppress shot noise originated from bulk dark current. InAsSb/AlAsSb/AlSb-based nBn and pBn barrier MWIR PDs were grown on GaSb substrates using molecular beam epitaxy (MBE). The GSG PDs were fabricated to realize the radio frequency (RF) response testing. X-ray diffraction (XRD) and atomic force microscopy (AFM) results indicate that both epitaxial structures exhibit good crystal quality. The 90 μm diameter pBn PDs exhibit a lower dark current density of 0.145 A/cm2 compared to the nBn PDs operating at room temperature (RT) and reverse bias of 400 mV, which indicates the uncooled barrier PDs perform with low noise. According to R0A results of PDs with different mesa diameter, the pBn PDs exhibit surface resistivity of approximately 1.7×104 Ω.cm, higher than 3.1×103 Ω.cm of nBn PDs. The contributions of the R0A volume terms for pBn and nBn were 16.60 Ω.cm2 and 5.27 Ω.cm2, respectively. Capacitance tests reveal that the pBn PDs, operating at zero bias, show a fully depleted barrier layer and partially depleted absorption region, while the nBn absorption region also exhibit partial depletion. RF response characterization demonstrate that the 90 μm diameter pBn PDs achieve 3dB bandwidth of 2.62 GHz at room temperature and under 3V reverse bias, which represents a 29.7% improvement over the corresponding nBn PDs, which only achieve 3dB bandwidth of 2.02 GHz. This signifies a preliminary achievement of uncooled barrier MWIR PDs capable of fast detection.

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历史
  • 收稿日期:2023-07-06
  • 最后修改日期:2023-07-18
  • 录用日期:2023-07-20
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