基于0.1-μm砷化镓赝配高电子迁移率晶体管（GaAs pHEMT）工艺，研制了一款覆盖整个W波段的宽带低噪声放大器。提出了一种由双并联电容组成的旁路电路，能够提供宽带射频接地，减小了级间串扰，利于实现宽带匹配。采用双谐振匹配网络实现了宽带的输入匹配和最佳噪声匹配。实测结果显示，最大增益在108 GHz出达到20.4 dB，在66到112.5 GHz范围内，小信号增益为16.9到20.4 dB。在90 GHz处，实测噪声系数为3.9 dB。实测的输入1-dB压缩点在整个W波段内约为-12 dBm。
A wideband low noise amplifier (LNA) covering the whole W-band in 0.1-μm GaAs pHEMT technology is designed. To reduce the inter-stage crosstalk and obtain wideband matching, a bypass circuit composed of dual shunt capacitors is proposed to provide wideband RF grounding. The wideband input matching and optimal noise matching are implemented by a dual-resonance input matching network. The measurement results exhibit a peak gain of 20.4 dB at 108 GHz. The measured small signal gain is 16.9 to 20.4 dB across 66 to 112.5 GHz. The measured noise figure (NF) is 3.9 dB at 90 GHz. The measured input 1-dB compression point (IP1dB) is around -12 dBm in W-band.