1.华东师范大学 物理与电子科学学院，上海 200241;2.南通大学 交通与土木工程学院，江苏 南通 226019
TN215
1.School of Physics and Electronic Science， East China Normal University， Shanghai 200241， China;2.School of Transportation and Civil Engineering， Nantong University， Nantong 226019， China
Supported by the National Natural Science Foundation of China （62201293，62034003）
提出了一种改进的高电子迁移率晶体管寄生电阻提取方法，该方法利用了特殊偏置点 （Vgs>Vth， Vds=0V）的等效电路模型， 推导了寄生电阻的表达式，采用半分析法对寄生电阻进行了优化。1~110 GHz S参数实测结果和仿真的S参数一致，证明该方法是有效的。
An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor （HEMT） is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points （Vgs > Vth， Vds = 0 V）. The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analytical method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.
李织纯,吕渊婷,张傲,高建军.一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法[J].红外与毫米波学报,2024,43(1):105~110]. LI Zhi-Chun, LYU Yuan-Ting, ZHANG Ao, GAO Jian-Jun. An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement[J]. J. Infrared Millim. Waves,2024,43(1):105~110.]
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