(英)电流增益截止频率441 GHz的InGaAs/InAlAs InP HEMT
DOI:
作者:
作者单位:

中国科学院微电子研究所

作者简介:

通讯作者:

中图分类号:

基金项目:

国家自然科学基金项目


InGaAs/InAlAs InP-based HEMT with the current cutoff frequency 441 GHz
Author:
Affiliation:

Institute of Microelectronics, Chinese Academy of Sciences

Fund Project:

The National Natural Science Foundation of China (61434006)

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    本文成功设计并制作了fT > 400 GHz的In0.53Ga0.47As/In0.52Al0.48As 铟磷高电子迁移率晶体管(InP HEMT)。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm,栅宽为2 × 50 μm。最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为1265 mS/mm。即使在相对较小的VDS = 0.7 V下,电流增益截止频率fT达到了441 GHz,最大振荡频率fmax达到了299 GHz。该器件可应用于太赫兹单片集成放大器和其他电路中。

    Abstract:

    In this letter, an In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT > 400 GHz was designed and fabricated successfully. A narrow gate recess technology was used to optimize the parasitic resistances. The gate length is 54.4 nm, and the gate width is 2 × 50 μm. The maximum drain current IDS.max is 957 mA/mm, and the maximum transconductance gm.max is 1265 mS/mm. The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz, even at a relatively small value of VDS = 0.7 V. The reported device can be applied to terahertz monolithic integrated amplifiers and other circuits.

    参考文献
    相似文献
    引证文献
引用本文
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2023-04-13
  • 最后修改日期:2023-05-30
  • 录用日期:2023-06-01
  • 在线发布日期:
  • 出版日期: