晕苯增强CMOS图像传感器
作者:
作者单位:

1.云南大学 材料与能源学院,云南 昆明 650500;2.昆明物理研究所,云南 昆明650223;3.云南省先进光电材料与器件重点实验室,云南 昆明 650223

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中图分类号:

TN206

基金项目:

国家重点研发计划 (2019YFB2203404)


Coronene enhanced CMOS image sensor
Author:
Affiliation:

1.School of Materials and Energy, Yunnan University, Kunming 650500, China;2.Kunming Institute of Physics, Kunming 650223, China;3.Yunnan Key Laboratory of Advanced Photoelectronic Materials & Devices, Kunming 650223, China

Fund Project:

Supported by the National Key Research and Development Program (2019YFB2203404)

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    摘要:

    由于紫外光在硅中的穿透深度有限,以及多晶硅栅极对紫外光的吸收,导致传统的硅基CMOS图像传感器在紫外光波段的响应不高。在此,本文选择一种低成本的下转换法来提升CMOS图像传感器的紫外响应能力,采用真空热蒸发法分别在石英衬底和CMOS图像传感器的像敏面上蒸镀了晕苯薄膜,并对薄膜的光学性能、红外光谱、光稳定性和热稳定性进行了研究。实验结果表明,晕苯薄膜能吸收紫外光并发射出500 nm的绿色荧光,可以与CMOS图像传感器的光谱响应峰值很好地匹配;同时,发现晕苯红外吸收光谱的实验值和计算值基本吻合;薄膜在200 ℃温度下退火20 min后,其发射峰的荧光强度保持在原来的95.7%;在280 nm激发波长照射大约60 min后,发光强度呈指数衰减至初始值的64%。采用CMOS单色相机在可见光(400~780 nm)和紫外光(365 nm)下定性分析了薄膜的紫外增强效果,发现蒸镀晕苯薄膜后的CMOS单色相机可以提高对紫外光的灵敏度。

    Abstract:

    The responsiveness of typical silicon-based CMOS image sensors in the UV band is not high due to the limited penetration depth of UV light in silicon and the absorption of UV light by poly silicon gates. A low-cost down-conversion method was used in this work to enhance the UV response of a CMOS image sensor. Vacuum thermal evaporation was used to deposit coronene films on quartz substrates and CMOS image sensors, respectively. The films'' optical characteristics,infrared spectrum,light stability,and thermal stability were investigated. The experimental results reveal that the Coronene coating absorbs UV light and emits green fluorescence at 500 nm,which closely matches the spectral response peak of the CMOS image sensor. At the same time,it is found that the experimental value of the infrared absorption spectrum of Coronene is in good agreement with the calculated value,and the fluorescence intensity of the emission peak remained 95.7% after the film was annealed at 200 ℃ for 20 minutes. After approximately 60 minutes of exposure at 280 nm excitation wavelength,the fluorescence intensity decreased exponentially to 64% of the initial value. The UV enhancement effect of the film was qualitatively analyzed by the CMOS monochromatic camera under visible light(400-780 nm) and ultraviolet light (365 nm) radiation. It is found that the sensitivity of the CMOS monochromatic camera to UV light can be improved after the deposition of Coronene film.

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罗磊,宋立媛,唐利斌,王善力,才玉华,李俊斌.晕苯增强CMOS图像传感器[J].红外与毫米波学报,2023,42(6):931~936]. LUO Lei, SONG Li-Yuan, TANG Li-Bin, WANG Shan-Li, CAI Yu-Hua, LI Jun-Bin. Coronene enhanced CMOS image sensor[J]. J. Infrared Millim. Waves,2023,42(6):931~936.]

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  • 收稿日期:2023-03-31
  • 最后修改日期:2023-10-30
  • 录用日期:2023-05-06
  • 在线发布日期: 2023-10-24
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