Shanghai Institute of Technical Physics
General project supported by the National Natural Science Foundation of China (52071329); Shanghai Natural Science Foundation (20ZR1466300); Aeronautical Science Foundation Project (202000024090006)
具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性，以及在不同温度下的光学性质。使用椭偏光谱法测量了"20~100 ℃" 下可见-近红外波段二氧化钒材料的椭偏参数，利用Gaussian、Lorentz获取了薄膜在相变前的光学性质，结合Drude模型拟合获取了材料在相变后的光学特性，获取了材料在300~1800 nm之间的折射率和消光系数等参数。变功率下1550 nm红外激光透射率的实验测试研究表明，材料的相变阈值功率为12 W/cm2，相变后透射率由51%减小到17%。
Vanadium dioxide materials, which show semiconductor-metal phase transition, can be used for protection of photoelectric detectors against laser blinding weapons. The structure, morphology and optical properties of vanadium dioxide thin films prepared by radio frequency magnetron sputtering at different temperatures were reported. The visible to infrared ellipsometric parameters of vanadium dioxide film at "20~100 ℃" were measured by using an ellipsometer. The optical properties of vanadium dioxide films before phase transition were obtained by Gaussian and Lorentz model, and the optical properties after phase transition were obtained by adding a Drude model. The refractive index and extinction coefficient between 300 nm and 1800 nm were obtained. The transmittance spectrum of 1550 nm infrared laser at varied power densities shows that the threshold power of phase transformation is about 12 W/cm2, where the transmittance decreases sharply from 51% to 17%.