1.School of Materials and Chemistry, University of Shanghai for Science and Technology;2.Zhejiang Lab, Hangzhou;3.Shanghai Institute of Technical Physics of the Chinese Academy of Sciences
器件材料质量好坏对于获得高性能红外探测器至关重要。提出决定器件材料质量的关键点在于精准控制材料结构中层与层之间晶格失配度。报道了晶格失配对材料质量和器件暗电流性能的影响。实验结论表明在液相外延技术生长的InAs/InAsSbP 材料体系中， InAs和InAsSbP间的晶格失配不是越小越好，而是有一个最佳值。如果晶格失配偏离这个值，不管是偏大还是偏小，材料的质量都会恶化。阐述了如何调整生长参数以获得合适的晶格失配度。制备了具有适宜晶格失配度的红外探测器件，该探测器零偏压下的室温峰值探测率为6.8×109cm Hz1/2W-1，与国际商用InAs探测器的相应指标相当。
The material quality is very important for obtaining the high performance infrared detector. It is presented that the key issue of the material quality is to control the lattice mismatch between the layers of the device architecture. The effects of the lattice mismatch on the material quality and the dark current characteristics were reported. In InAs/InAsSbP system grown by LPE technology, the lattice mismatch between InAsSbP and InAs is not the smaller the better, but has an appropriate value. If the lattice mismatch deviates from this value, no matter whether it is smaller or larger, the material quality will deteriorate. Then it was stated how to adjust growth parameters to obtain the appropriate lattice mismatch. The infrared detector made from the device architecture with the appropriate lattice mismatch was fabricated, and the room-temperature peak detectivity of this detector is 6.8×109cm Hz1/2W-1 at zero bias, which is comparable with that of international commercial InAs photodetectors.