具有界面依赖光致发光的双层WS2/Ga2O3异质结的能带工程
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1.中国科学院上海技术物理研究所;2.郑州大学 材料科学与工程学院

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Band alignment engineering of bilayer WS2/Ga2O3 heterostructures with interface-dependent photoluminescence
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1.Shanghai Institute of Technical Physics, Chinese Academy of Sciences;2.University of Chinese Academy of Sciences;3.College of Materials Science and Engineering, Zhengzhou University

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    摘要:

    二维范德华异质结构及其界面因其在下一代传感、热成像和光通信系统中的应用前景而得到广泛的关注。利用垂直WS2/Ga2O3异质结构中异质界面诱导了反常的光致发光(PL)发射。垂直堆栈的WS2/Ga2O3异质界面使其形成了II型能带结构,导致与Ga2O3层接触的底层WS2的PL强度下降。而异质界面的强耦合作用也影响了双层WS2中的同质层间相互作用,使得上层WS2出现反常的PL增强。这种堆栈新型二维异质结构为定制目标能带结构并控制其光子和电子行为提供一种新的手段。

    Abstract:

    Two-dimensional (2D) van der Waals heterostructures and interfaces are widely researched for their potential application in next generation sensing, thermal imaging and light communication systems. Here, we demonstrated the hetero-interface induced anomalous photoluminescence (PL) emissions in the vertical WS2/Ga2O3 heterostructures. The WS2/Ga2O3 hetero-interface varies type-II band structure and brings subsequent PL decline in the bottom WS2 monolayer contacted with Ga2O3 layer. Such hetero-interlayer coupling interaction between oxides and 2D layered transition metal dichalcogenides (TMDs) in the stacked heterostructures impacts interlayer interaction between the bottom WS2 monolayer and the upper WS2 monolayer in a WS2 bilayer, which leads to an anomalous PL enhancement in the bilayer WS2. Stacked hetero-interface will benefit for controlling the optical or electronic behavior and modulating energy band structures by customizing transformative 2D heterostructures used in next-generation nanoscale optoelectronic detectors and photodetectors.

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  • 收稿日期:2022-09-14
  • 最后修改日期:2022-10-13
  • 录用日期:2022-10-24
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