“Ga free” strain-balanced InAsP/InAsSb superlattices grown on InAs substrate by Metal Organic Chemical Vapor Deposition(MOCVD)was proposed and implemented to explore its feasibility as an infrared absorption material. First, the band gaps of InAsP/InAsSb superlattices were calculated by k.p method and it was found that their cut-off wavelengths cover mid-wavelength infrared to long wave infrared region. Then InAs_0.8P_0.2/InAs_0.7Sb_0.3superlattices was chosen and grown on InAs substrate by MOCVD. XRD measurement shows that the lattice mismatch between the InAs substrate peak and 0^_th order satellite peak of superlattices is only 61 arcsec, indicating strain balance condition is achieved. AFM test for surface morphology shows its root mean square roughness is only 0.4 nm for 5×5 μm^₂ regions. The low-temperature PL spectra shows strong superlattice emission with peak located around 3.3 μm, which is closed to the design value. All the results indicate the feasibility and practicality of strain balanced InAsP/InAsSb superlattices grown by MOCVD for infrared detection.