分子束外延高铟组分InGaAs薄膜研究
作者:
作者单位:

1.哈尔滨理工大学 电气与电子工程学院,黑龙江 哈尔滨 150080;2.中国科学院上海技术物理研究所 传感技术国家重点实验室,上海 200083;3.中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083

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中图分类号:

TN215

基金项目:

国家自然科学基金(62075229,62175250),上海市青年科技启明星(21QA1410600),上海市国际合作项目(20520711200),上海市学术带头人(21XD1404200)


Study on Molecular Beam Epitaxy of High indium InGaAs Films
Author:
Affiliation:

1.College of Science, Harbin University of Science and Technology, Harbin 150080, China;2.State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai 200083, China;3.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai 200083, China

Fund Project:

Supported by National Natural Science Foundation of China (62075229,62175250), the Shanghai Rising-Star Program (21QA1410600), the International Science and Technology Cooperation Program of Shanghai (20520711200), and the Program of Shanghai Academic/Technology Research Leader (21XD1404200)

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    摘要:

    研究了分子束外延生长条件对高铟组分InGaAs材料性能的影响,分析了生长温度、V/III比和As分子束形态对In0.74Ga0.26As材料光致发光和X射线衍射峰强度、本底载流子浓度和迁移率的影响。测试结果表明:适中的生长温度和V/III比可以提高材料晶格质量,减少非辐射复合,降低本底杂质浓度。As分子束为As2时In0.74Ga0.26As材料质量优于As4分子束。当生长温度为570 ℃,As分子束形态为As2,V/III比为18时,可以获得较高的光致发光和X射线衍射峰强度,室温和77 K下的本底载流子浓度分别达到6.3×1014 cm-3和4.0×1014 cm-3,迁移率分别达到13 400 cm2/Vs和45 160 cm2/Vs。

    Abstract:

    The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature, V/III ratio and arsenic dimer of In0.74Ga0.26As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measurements, as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality, reduce the non-radiation recombination and decrease the background impurity concentration. The In0.74Ga0.26As materials grown using As2 dimer show better material quality than those using As4 dimer. For the material grown at 570 ℃, As2 dimer and V/III ratio of 18, relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K, the background carrier concentrations were 6.3×1014 cm-3 and 4.0×1014 cm-3, while the mobilities were 13 400 cm2/Vs and 45 160 cm2/Vs, respectively.

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杨瑛,王红真,范柳燕,陈平平,刘博文,贺训军,顾溢,马英杰,李淘,邵秀梅,李雪.分子束外延高铟组分InGaAs薄膜研究[J].红外与毫米波学报,2022,41(6):987~994]. YANG Ying, WANG Hong-Zhen, FAN Liu-Yan, CHEN Ping-Ping, LIU Bo-Wen, HE Xun-Jun, GU Yi, MA Ying-Jie, LI Tao, SHAO Xiu-Mei, LI Xue. Study on Molecular Beam Epitaxy of High indium InGaAs Films[J]. J. Infrared Millim. Waves,2022,41(6):987~994.]

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  • 收稿日期:2022-05-05
  • 最后修改日期:2022-11-09
  • 录用日期:2022-06-02
  • 在线发布日期: 2022-11-07
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