分子束外延高铟组分InGaAs薄膜研究
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1.哈尔滨理工大学电气与电子工程学院;2.中国科学院上海技术物理研究所 传感技术国家重点实验室;3.中国科学院上海技术物理研究所 红外物理国家重点实验室

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TN215

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国家自然科学基金(62075229,62175250),上海市青年科技启明星(21QA1410600),上海市国际合作项目(20520711200),上海市学术带头人(21XD1404200)


Study on Molecular Beam Epitaxy of High indium InGaAs Films
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1.College of Science,Harbin University of Science and Technology;2.State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics;3.State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics

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    摘要:

    高铟组分InGaAs薄膜作为吸收层的短波红外探测器截止波长大于1.7微米,具有许多备受关注的重要应用。本文研究了分子束外延生长条件对高铟组分InGaAs材料性能的影响,分析了生长温度、V/III比和As分子束形态对In0.74Ga0.26As材料光致发光和X射线衍射峰强度、本底载流子浓度和迁移率的影响。测试结果表明:适中的生长温度和V/III比可以提高材料晶格质量,减少非辐射复合,降低本底杂质浓度。As分子束为As2时In0.74Ga0.26As材料质量优于As4分子束。当生长温度为570 ℃,As分子束形态为As2,V/III比为18时,可以获得较高的光致发光和X射线衍射峰强度,室温和77 K下的本底载流子浓度分别达到6.3×1014 cm-3和4.0×1014 cm-3,迁移率分别达到13400 cm2/Vs和45160 cm2/Vs。

    Abstract:

    The cutoff wavelengths of short-wave infrared photodetectors with high indium composition InGaAs films are beyond 1.7 μm, attracting much attention owing to their important applications. The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature, V/III ratio and arsenic dimers of In0.74Ga0.26As materials were investigated and adjusted to optimize the peak intensity of photoluminescence and X-ray diffraction measurements, as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality, reduce the non-radiation recombination and decrease the background impurity concentration. The In0.74Ga0.26As materials grown using As2 dimers show better material quality than those using As4 dimers. For the material grown at 570 ℃, As2 dimers and V/III ratio of 18, relatively strong photoluminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K, the background carrier concentrations were 6.3×1014 cm-3 and 4.0×1014 cm-3, while the mobilities were 13400 cm2/Vs and 45160 cm2/Vs, respectively.

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  • 收稿日期:2022-05-05
  • 最后修改日期:2022-05-30
  • 录用日期:2022-06-02
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