InAsSb势垒阻挡型红外探测器暗电流特性研究
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昆明物理研究所

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Research on dark current characteristics of InAsSb Barrier-blocking infrared detector
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Kunming Institute of Physics

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    摘要:

    计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程。讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流。成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结果表明由于势垒层为p型掺杂,在吸收层形成耗尽区,导致器件中的产生复合电流并没有完全被抑制,工作温度低于180 K,器件暗电流受限于产生复合电流,工作温度高于180 K,器件暗电流受限于扩散电流。

    Abstract:

    The carrier lifetimes determined by radiative and Auger 1 recombination in InAs1-xSbx were calculated at different temperatures. For n-type InAsSb material, at low temperatures, the carrier lifetime is limited by the radiative recombination, while at high temperatures, the Auger 1 process is dominant. An analytical model of dark current for barrier blocking detectors was discussed, by adding a heavily doped n-type InAsSb electrode on the other side of the absorber layer to form an nBnn+ structure to deplete the carriers in absorber, the hole concentration in absorption region was decreased about two orders of magnitude, further reducing the dark current of the devices. InAsSb-based nBnn+ barrier devices have been successfully fabricated and characterized. At 150 K, the devices displayed a dark current density as low as 3×10-6 A/cm2, the dark current density of the detectors were fitted by the nBn-based architecture analytical current model, the experimental results indicated that due to the p-type doping of the barrier layer, a depletion region was formed in the InAsSb absorber region, resulting in incomplete inhibition of G-R current. At temperatures below 180 K, the dark current of the detector is limited by G-R process, at temperatures above 180 K, the dark current of the device is limited by diffusion current.

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  • 收稿日期:2022-04-24
  • 最后修改日期:2022-05-20
  • 录用日期:2022-05-23
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