基于梯度能带结构的高速非制冷中波红外HgCdTe光电探测器
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中科院上海技术物理研究所

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国家重点研发计划资助


High Speed Uncooled MWIR Infrared HgCdTe Photodetector Based on Graded Bandgap Structure
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Shanghai Institute of Technology Physics

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    摘要:

    高速中波红外探测器在光频梳等领域应用广泛,但目前的中波探测器受限于较慢的响应速度且需要工作于低温环境以达到较高的探测率。本文报道了基于梯度能带结构的高速室温中波红外HgCdTe器件,器件设计为n-on-p同质结结构,在300K的零偏压条件下达到了1.33ns(750MHz)的总的响应时间,相对于非制冷的碲镉汞器件和工作于高偏压下的碲镉汞APD器件响应速度有所提高。基于一维模型的分析表明,吸收层中的组分梯度可以形成内置电场并改变了载流子的输运特性,该模型由不同组分梯度的HgCdTe器件的实验对比验证。因此,我们的工作优化了高速HgCdTe中波红外探测器的设计,并为设计超快中波红外光电探测器提供了一种可行的思路。

    Abstract:

    Ultrafast infrared photodetectors have evoked widespread interest in emerging areas such as high-precision frequency comb spectroscopy. However, existing mid-wave infrared photodetectors with high detectivity operate at cryogenic conditions, with a slow response time in the microsecond range. Hence, we report a high-speed room-temperature mid-wave infrared HgCdTe photodetector based on graded bandgap structure. This study explores a n-on-p homojunction structure on epitaxial HgCdTe, which achieves a total response time of 1.33ns (750MHz) under zero bias voltage at 300K, which is faster than commercial uncooled MCT photovoltaic photodetectors and MWIR HgCdTe APDs under high reverse bias. The analysis based on one-dimensional equations shows that compositional grading in the absorber layer can form built-in electric field and the transport mechanism of carriers is changed, the model is confirmed by the comparisons of different graded HgCdTe photodetectors. Thereby, our work facilitates design of the high-speed HgCdTe MWIR detectors, and provides a promising method to optimize the ultrafast MWIR infrared photodetectors.

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  • 收稿日期:2022-03-22
  • 最后修改日期:2022-07-01
  • 录用日期:2022-07-04
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