碲镉汞APD焦平面技术研究
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1.昆明物理研究所;2.华中科技大学

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TN215

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Study on HgCdTe APD focal plane technology
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1.Kunming Institute of Physics;2.Huazhong University of Science and Technology

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    摘要:

    采用LPE生长的中波碲镉汞材料,通过B离子注入n-on-p平面结技术制备了规模为256×256,像元中心距为30μm的碲镉汞APD焦平面探测器芯片。在液氮温度下对其增益、暗电流以及过噪因子等性能参数进行了测试分析,结果表明,所制备的碲镉汞APD焦平面芯片在-8.5V反偏下平均增益达到166.8,增益非均匀性为3.33%;在0~-8.5V反向偏置下,APD器件增益归一化暗电流为9.0×10-14A~ 1.6×10-13A,过噪因子F介于1.0~1.5之间。此外,还对碲镉汞APD焦平面进行了成像演示,并获得了较好的成像效果。

    Abstract:

    A 256×256 HgCdTe APD hybrid focal plane array (FPA) with 30μm pixel pitch was prepared by B ion implantation n-on-p planar junction technology based on MW HgCdTe material grown by LPE. The performance parameters such as gain, dark current and noise factor were characterized and analyzed at liquid nitrogen temperature. The results show that the average gain of HgCdTe APD focal plane chip is 166.8 and the gain non-uniformity is 3.33% under - 8.5V reverse bias; Under 0 ~ - 8.5V reverse bias, the gain normalized dark current of APD device is 9.0×10-14A~1.6×10-13A, the noise factor F is between 1.0 and 1.5. In addition, the imaging demonstration of HgCdTe APD focal plane is carried out, and a good imaging effect is obtained.

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  • 收稿日期:2022-03-01
  • 最后修改日期:2022-04-03
  • 录用日期:2022-04-14
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