Institute of Applied Electronics, CAEP
本文对976nm波段超大光学腔结构半导体激光器的外延和谐振腔设计进行了数值研究。在量子阱层的下方和上方设计了模式控制层，以抑制快轴高阶模的激射。通过能带结构的调控抑制了电子泄漏，调控使得电子势垒从p波导层到p包层增加。优化后的外延结构内部损耗为0.66 cm-1，内部量子效率为0.954，远场发散角半高全宽为17.4°。对于谐振腔设计，提出了沿谐振腔线性电流分布结构，以减少空间烧孔效应，这使激光器在20 A时功率提高了1.0 W。采用超大光学腔外延结构的4毫米腔长、100μm发光区宽度的单管芯片，在25°C连续电流注入下，21 W输出功率时达到约71%的高功率效率。
The considerations in the epitaxial and longitudinal design of a supper-large-optical-cavity structure diode laser in the 976-nm band are numerically studied and presented here. Mode control layers were designed underneath and up the quantum well layer to suppress the lasing of high-order transverse modes. The electron leakage was suppressed by a band energy engineering, where the electron barrier increases from the p-waveguide layer to the p-cladding layer. The optimized structure has an internal loss of 0.66 cm-1, an internal quantum efficiency of 0.954, and a full width at half maximum vertical far-field angle of 17.4°. For the resonant cavity design, a liner current profile along the cavity was proposed to reduce the longitudinal spatial hole burning effect, where a power penalty of 1.0 W at 20 A is suppressed. The 4-mm-long and 100 μm wide broad-area single emitter with the supper-large-optical-cavity epitaxial structure was designed to have a high power-efficiency of about 71% at an output power of 21 W under continuous current injection at 25°C.