截止波长2.2 µm的平面型延伸波长InGaAs探测器
作者:
作者单位:

1.中国科学院上海技术物理研究所 传感技术国家重点实验室,上海 200083;2.中国科学院红外成像材料与器件重点实验室,上海 200083;3.中国科学院大学,北京 100049

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中图分类号:

TN215

基金项目:

上海市优秀学术/技术带头人计划资助(21XD1404200);中国科学院重点部署项目(ZDRW-CN-2019-3);中国科学院联合基金(6141A01170106);上海市级科技重大专项(2019SHZDZX01);国家自然科学基金(62075229),国家自然科学基金(62175250).


Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength
Author:
Affiliation:

1.State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai 200083, China;3.University of the Chinese Academy of Sciences, Beijing 100049, China

Fund Project:

Supported by the Program of Shanghai Academic/Technology Research Leader under Grant (21XD1404200),Key deployment projects of the Chinese Academy of Sciences(ZDRW-CN-2019-3),Joint fund of Chinese Academy of Sciences(6141A01170106),the Shanghai Municipal Science and Technology Major Project(2019SHZDZX01) and the National Natural Science Foundation of China(62075229,62175250)

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    摘要:

    采用闭管扩散的方法成功研制了截止波长2.2 μm的平面型延伸波长InGaAs探测器芯片。在分子束外延法(MBE)生长的In0.75Al0.25As/ In0.75Ga0.25As/ In0.75Al0.25As外延材料上,采用砷化锌作为扩散掺杂源、SiNx作为扩散掩膜层,实现了扩散成结。分析了扩散结深和载流子侧向收集宽度、I-V特性、光谱响应特性和探测率,结果表明:150 K温度下,器件暗电流密度0.69 nA/cm2@-10 mV,响应截止波长和峰值波长分别为2.12 μm和1.97 μm,峰值响应率为1.29 A/W,峰值量子效率达82%,峰值探测率为1.01×1012 cmHz1/2/W。这些结果对后续进一步优化平面型延伸波长InGaAs焦平面探测器有重要的指导意义。

    Abstract:

    Planar-type 2.2 μm wavelength-extended InGaAs photodetectors (PDs) using the sealed-ampoule diffusion method was reported. The zinc arsenide powder was used as the dopant source, which was driven into the cap of the In0.75Al0.25As/In0.75Ga0.25As/In0.75Al0.25As hetero structure materials grown by molecular beam epitaxy (MBE), using a SiNx as diffusion mask deposited by ICP-CVD. The junction depth, the lateral collection width of photogenerated carriers, the I-V characteristics, the spectral response and the detectivity of the detector at different temperatures were analyzed. The results indicate that the PD exhibits a low dark current density of 0.69×10-9 A/cm2 at -10 mV at 150 K. The cutoff wavelength and peak wavelength were 2.12 μm and 1.97 μm. The peak detectivity, peak responsivity and quantum efficiency was 1.01×1012 cm·Hz1/2/W, 1.29 A/W and 82% respectively. These results suggest that the planar-type InGaAs can reach high performance.

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程吉凤,李雪,邵秀梅,李淘,王红真,马英杰,杨波,龚海梅.截止波长2.2 µm的平面型延伸波长InGaAs探测器[J].红外与毫米波学报,2022,41(5):804~809]. CHENG Ji-Feng, LI Xue, SHAO Xiu-Mei, LI Tao, WANG Hong-Zhen, MA Ying-Jie, YANG Bo, GONG Hai-Mei. Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength[J]. J. Infrared Millim. Waves,2022,41(5):804~809.]

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  • 收稿日期:2022-02-16
  • 最后修改日期:2022-07-21
  • 录用日期:2022-04-27
  • 在线发布日期: 2022-09-05
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