分子束外延P-on-N HgCdTe As扩散调控研究
作者:
作者单位:

1.中科院上海技术物理研究所 红外材料与器件重点实验室,上海 200083;2.国科大杭州高等研究院, 浙江 杭州 310024

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中图分类号:

O471.5;TN305.3

基金项目:

中国科学院青年创新促进会项目;上海市自然科学基金资助项目(21ZR1473500)


Study on As diffusion control of MBE-grown P-on-N HgCdTe
Author:
Affiliation:

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

Fund Project:

Supported by Youth Innovation Promotion Association CAS;Shanghai Natural Science Foundation (21ZR1473500)

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    摘要:

    对分子束外延(MBE)生长的原位As掺杂HgCdTe外延材料的热退火造成的As扩散控制进行研究。在较低的退火温度下获得了As扩散长度可控的HgCdTe材料,易于形成符合设计参数的PN结轮廓,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,原位As掺杂HgCdTe的As浓度的大小和纵向分布随着不同的Hg分压而发生改变。并通过理论计算获得了不同Hg分压下的As扩散系数。同时,通过数值模拟对不同As扩散长度的P-on-N器件结构进行了暗电流模拟,验证了As掺杂结深推进工艺的重要性。

    Abstract:

    As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy (MBE) was studied. HgCdTe with controllable As diffusion length is obtained at a lower annealing temperature, which is easy to form a PN junction profile that meets the design parameters. It provides a basis for the subsequent development of new HgCdTe FPA devices. It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process. And through theoretical calculations, As diffusion coefficients under different Hg pressures are obtained. Meanwhile, the dark current simulation of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation, which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.

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沈川,杨辽,刘仰融,卜顺栋,王高,陈路,何力.分子束外延P-on-N HgCdTe As扩散调控研究[J].红外与毫米波学报,2022,41(5):799~803]. SHEN Chuan, YANG Liao, LIU Yang-Rong, BU Shun-Dong, WANG Gao, CHEN Lu, HE Li. Study on As diffusion control of MBE-grown P-on-N HgCdTe[J]. J. Infrared Millim. Waves,2022,41(5):799~803.]

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  • 收稿日期:2022-02-15
  • 最后修改日期:2022-09-06
  • 录用日期:2022-04-21
  • 在线发布日期: 2022-09-05
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