分子束外延P-on-N HgCdTe As扩散调控研究
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中科院上海技术物理研究所

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Study on As diffusion Control of MBE-grown P-on-N HgCdTe
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Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    摘要:

    对分子束外延(MBE)生长的原位As掺杂HgCdTe外延材料的热退火造成的As扩散控制进行研究。在较低的退火温度下获得了As扩散长度可控的HgCdTe材料,易于形成符合设计参数的PN结轮廓,为后续新型焦平面器件的研发提供基础。研究发现,在热退火过程中,原位As掺杂HgCdTe的As浓度的大小和纵向分布随着不同的Hg分压而发生改变。并通过理论计算获得了不同Hg分压下的As扩散系数。同时,通过数值模拟对不同As扩散长度的P-on-N器件结构进行了暗电流模拟,验证了As掺杂结深推进工艺的重要性。

    Abstract:

    As diffusion control caused by the thermal annealing of the in-situ As-doped HgCdTe grown by molecular beam epitaxy (MBE) was studied. The HgCdTe material with controllable As diffusion length is obtained at a lower annealing temperature, which is easy to form a PN junction profile that meets the design parameters, and provides a basis for the subsequent development of new focal plane devices. It is found that during the thermal annealing process, the size and longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed with different Hg pressures. And through theoretical calculations, As diffusion coefficients under different Hg pressures are obtained. Meanwhile, the dark current simulation of the P-on-N device structure with different As diffusion lengths was carried out through numerical simulation, which verified the importance of the As-doped junction deep advancing process.

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  • 收稿日期:2022-02-15
  • 最后修改日期:2022-04-13
  • 录用日期:2022-04-21
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