State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences
Supported by the State Key Development Program for Basic Research of China (2018YFB2201103), Project supported by the Major Program of the National Natural Science Foundation of China (62090060), the National Natural Science Foundation of China (61874117, 52172165，61804087), the Key Projects of Jilin Province Science and Technology Development Plan, China (20200401006GX).
Optically pumped dual-wavelength vertical external cavity surface emitting semiconductor laser (VECSEL) with a single gain chip is reported. The active region of the gain chip is composed of two groups of quantum wells with different lasing wavelengths, one group of quantum wells with shorter wavelength operates by absorption pumping, and the other group of quantum wells with longer wavelength operates by in-well pumping. When the VECSEL is operating, the short-wavelength quantum wells pumped by the absorption region are first lased, due to the intensity modulation effect of the long-wavelength quantum wells on the short-wavelength quantum wells, it can be observed that the peak intensity of the spectrum oscillates periodically with time, pulsed operation of the VECSEL was observed by highly sensitive detector. With the increasing of the pump power, stable dual-wavelength emission was achieved, the peak positions of emission wavelength are 966nm and 968nm respectively. The output power of the stable dual-wavelength emission can reach 560mW, and the far fields show Gaussian cross-sections in orthogonal dimensions, and the divergence angles of 6.68° and 6.87° are obtained.