基于薄膜工艺的1030GHz混频器和750-1100GHz倍频器研制
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中国科学院国家空间科学中心

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Design of a 1030 GHz mixer and a 750-1100 GHz tripler based on thin-film technology
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NSSC

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    摘要:

    基于南京电子器件研究所砷化镓工艺线,自主完成了750-1100 GHz全频带三倍频器以及中心频率为1030 GHz的低损耗二次谐波混频器的研制。为了提升模块的性能,将传统的场路结合的设计方法进行了扩展,引入器件的参数优化,并建立起两者互为反馈的关系,从而达到整个设计过程的闭环。研制出的单片电路厚度为3um,并通过梁氏引线支撑悬置于腔体结构中。测试结果表明宽带倍频器在790-1100 GHz频率范围内输出功率为-23~-11 dBm。以上述倍频源作为射频信号对二次谐波混频器进行测试,在1020-1044 GHz频率范围内变频损耗优于17.5 dB,在1030 GHz处测得的最小变频损耗为14.5 dB。

    Abstract:

    Based on the GaAs process of Nanjing electronic devices institute, a 750-1100 GHz tripler and a low loss subharmonic mixer with center frequency of 1030 GHz have been independently completed. To improve the performance of the module, the parameter optimization of the device is introduced in the traditional design method of field circuit combination, and the mutual feedback relationship is established. Therefore, the whole design process establishes the closed-loop. The 3μm thick monolithic circuit is supported in the cavity structure through beam lead. The measured result shows that the output power of the broadband frequency multiplier is -23 ~ -11 dBm in the frequency range of 790~1100 GHz. Using the above frequency multiplier source as the RF signal to test the subharmonic mixer, the conversion loss is better than 17.5 dB in the frequency range of 1020 ~ 1044 GHz, and the minimum conversion loss measured at 1030 GHz is 14.5 dB.

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  • 收稿日期:2022-01-24
  • 最后修改日期:2022-03-16
  • 录用日期:2022-03-21
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