高功率793 nm半导体激光器
作者:
作者单位:

1.中国工程物理研究院应用电子学研究所,四川 绵阳 621900;2.中国工程物理研究院高能激光重点实验室,四川 绵阳 621900

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中图分类号:

O436

基金项目:

国家自然科学基金(11804322),中国工程物理研究院创新发展基金 (C-2020-CX2019035)


High power 793 nm diode lasers
Author:
Affiliation:

1.Institute of Applied Electronics, CAEP, Mianyang 621900, China;2.The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China

Fund Project:

Supported by National Natural Science Foundation of China (11804322), the Innovation and Development Fund of CAEP (C-2020-CX2019035)

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    摘要:

    针对掺铥光纤激光器泵浦源的需求,研制了波长为793 nm的高功率半导体激光芯片和尾纤耦合模块。激光器外延采用了非对称大光腔的波导结构,降低了模式损耗,波导采用无铝的GaInP材料,结合真空解理钝化工艺提高了腔面损伤阈值。通过外延结构和腔面镀膜的优化,研制的激光器单管输出功率达到12 W@11A,在输出功率8 W时通过了300 h老化测试。采用7只单管制备了尾纤耦合模块,耦合至100 μm NA.0.22光纤中,输出功率为40 W@7A,电-光效率为49.5%@40 W。

    Abstract:

    To satisfy the need of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module were developed. The laser epitaxy adopts the large asymmetric optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improves the facet damaged threshold combined with vacuum cleavage passivation process. Through the optimization of epitaxial structure and facet coating, the output power of the developed laser reaches 12 W@11A, passed the 300 h aging test of 8 W. Seven single emitters were space coupled to 100 μ m 0.22 NA fiber modules. The output power of the model is 40 W@7A, and the electro-optical efficiency is 49.5% @ 40 W.

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周坤,何林安,李弋,贺钰雯,张亮,胡耀,刘晟哲,杨鑫,杜维川,高松信,唐淳.高功率793 nm半导体激光器[J].红外与毫米波学报,2022,41(4):685~689]. ZHOU Kun, HE Lin-An, LI Yi, HE Yu-Wen, ZHANG Liang, HU Yao, LIU Sheng-Zhe, YANG Xin, DU Wei-Chuan, GAO Song-Xin, TANG Chun. High power 793 nm diode lasers[J]. J. Infrared Millim. Waves,2022,41(4):685~689.]

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  • 收稿日期:2022-01-21
  • 最后修改日期:2022-08-17
  • 录用日期:2022-02-17
  • 在线发布日期: 2022-08-10
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