10W近衍射极限输出的高效率窄线宽主控振荡放大半导体激光器
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中国工程物理研究院应用电子学研究所

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国家自然科学基金(Grant No. 11804322);中国工程物理研究院创新发展基金 (Grant No. C-2020-CX2019035)


Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power
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Institute of Applied Electronics, CAEP, Mianyang, 621900, China

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the National Natural Science Foundation of China (Grant No. 11804322) , the Innovation and Development Fund of CAEP (Grant No. C-2020-CX2019035)

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    摘要:

    为研制近衍射极限的高功率半导体激光器,采用了片上光栅、窄脊型波导、锥形放大器一体集成的主控放大(MOPA)技术路线,以长度为8mm、脊型宽度为3um的波导为单模种子源,配合长度为7mm、全角为3.3°的锥形放大器,实现了功率10.1W、慢轴光束质量M2(1/e2)因子=1.06,3dB线宽40pm,工作电光效率51%的半导体激光输出,并采用片上电致加热光栅调谐技术,实现了中心波长在4nm范围内连续可调。

    Abstract:

    High-power semiconductor laser with nearly diffraction limited narrowband emission was designed and fabricated. The monolithic master oscillator (MOPA) diode laser consists of distributed Bragg gratings, a narrow ridge waveguide and a tapered amplifier. The ridge waveguide with length of 8 mm and width of 3 μm is used as the single-mode seed source. A tapered gain section with length of 7 mm and a full taper angle of 3.3° amplify the seed power. The fabricated device reach an output power of 10.1 W with a slow axis beam quality M2 (1/e2) factor of 1.06 and an electro-optic efficiency of 50.5% at 10.1 W. The spectral linewidth is 40 pm (3dB), and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.

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  • 收稿日期:2022-01-14
  • 最后修改日期:2022-02-10
  • 录用日期:2022-02-17
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