High operating temperature infrared detector is one of the important development tendencies for the third-generation infrared focal plane. The interband cascade photodetectors take advantage of potential barrier structure and multistage absorption structure. Unidirectional transport of photogenerated carriers is achieved through relaxation and tunneling region which can reduce the generation-recombination current from the depletion region of the PN junction. The interband cascade detectors can effectively collect photo-generated carriers， and even the diffusion length is short utilizing the multiple and short absorption regions. So the detection performance can be improved at high operating temperature. In this paper， we present our recent research progress in the interband cascaded infrared optoelectronic devices， including high operation temperature infrared interband cascade detectors， high speed interband cascade detectors， and interband cascade light-emitting devices.