InAs/InAsSb超晶格中/中波红外双色焦平面探测器研制
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中国空空导弹研究院

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航空科学基金项目


Reserch on Mid/Middle Dual-Band Infrared Focal Plane Array Detector on InAs/InAsSb Superlattice
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China-Airborne-Missile Academy

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Aviation Science Fund Project

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    摘要:

    超晶格材料已经成为了第三代红外焦平面探测器的优选材料。双波段红外探测器能够通过对比两个波段内的光谱信息差异,对复杂的背景进行抑制,提高探测效果,在需求中尤为重要。本文开展了InAs/InAsSb超晶格中/中双色焦平面探测器设计及制备技术研究,从器件设计、材料外延、芯片加工等方面展开研究,制备了中心距30μm的320×256InAs/InAsSb二类超晶格中/中波双色焦平面探测器。器件短中波峰值探测率达到7.2×1011cm?Hz1/2W-1,NETD:19mK,中波峰值探测率为6.7×1011cm?Hz1/2W-1,NETD:12mK;短中波有效像元率为99.51%,中波为99.13%,获得了高质量的成像效果,实现中中双色探测。

    Abstract:

    Superlattice materials have become the preferred materials for the third-generation infrared focal plane array detectors. The dual-band infrared detector can suppress the complex background and improve the detection effect by comparing the spectral information difference in the two bands, which is particularly important in demand. The research on the design and preparation technology of the InAs/InAsSb superlattice mid/middle dual- band focal plane array detector is carried out, and the research is carried out from the aspects of device design, material epitaxy, and chip processing. In this paper,we report research results of 320 × 256 dual- band mid/middle -wavelength infrared InAs /InAsSb superlattice focal plane arrays.The detector structure is NBN epitaxial multilayer and the signal is read out by sequential mode.The pixel center distance of the detectoris 30μm, At 77K measurement,The SMW peak detection rate of the device reaches 7.2 × 1011cm?Hz1/2W-1、NETD:19mK and dead pixel rate is 0.49%; The MW peak detection rate is 6.7×1011cm?Hz1/2W-1,NETD:12mK and dead pixel rate is 0.87%.A high-quality imaging effect is obtained, and a mid to middle two- band detection is achieved.

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  • 收稿日期:2021-10-08
  • 最后修改日期:2022-03-08
  • 录用日期:2022-02-14
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