溅射法制备n型碲化镉薄膜的光电化学特性研究
作者:
作者单位:

1.中广核工程有限公司核电安全监控技术与装备国家重点实验室,广东深圳,518172;2.上海大学 材料科学与工程学院, 上海 200072;3.中国科学院上海技术物理研究所 红外成像材料和探测器实验室,上海 200083;4.杨浦区市东医院 重症监护科室, 上海 200438;5.苏州科技大学 物理科学与技术学院,江苏 苏州215009;6.上海大学(浙江)高端装备基础件材料研究院,浙江 嘉善314113

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TB34

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Photoelectrochemical properties of sputtered n-type CdTe thin films
Author:
Affiliation:

1.State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, China Nuclear Power Engineering Co., Ltd., Shenzhen 518172, China;2.School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China;3.Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai, 200083, China;4.Intensive Care Unit, Yangpu District Shidong Hospital, , Shanghai 200438, China;5.School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;6.Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China

Fund Project:

Supported by Open Topic of the State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment (K-A 2019.418), and Open Topic of Key Laboratory of Infrared Imaging Materials and Devices (IIMDKFJJ-20-01)

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    摘要:

    采用溅射法制备了n型碲化镉薄膜。研究了不同沉积时间制备的n型碲化镉薄膜的形貌、结构和光学性质,以及薄膜厚度和退火工艺对n型碲化镉薄膜光电化学特性的影响。实验结果表明,溅射时间为25 min的碲化镉薄膜具有较好的PEC性能。退火工艺可以提高沉积的n型碲化镉薄膜的光电化学性能。当用饱和氯化镉溶液涂覆碲化镉薄膜并在真空中400 ℃退火时,n型碲化镉薄膜的光电化学性能最佳,光电流达到301 μA/cm2

    Abstract:

    In this paper, n-type CdTe thin films were prepared by sputtering method. The morphology, structure and optical properties of n-type CdTe thin films deposited with different time and the influence of film thickness and annealing process on the photoelectrochemical (PEC) characteristics of n-type CdTe thin films were studied. The experimental results demonstrated that CdTe thin films with sputtering time of 25 min had better PEC performance. Annealing process could enhance the PEC properties of deposited n-type CdTe thin films. When CdTe thin films were coated with saturated CdCl2 solution and annealed in vacuum at 400 °C, the photocurrents of n-type CdTe thin films achieved 301 μA/cm2.

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曹萌,虞斌,张翔,许成刚,张珊,孙丽颖,谭小宏,姜昱丞,豆家伟,王林军.溅射法制备n型碲化镉薄膜的光电化学特性研究[J].红外与毫米波学报,2022,41(4):659~667]. CAO Meng, YU Bin, ZHANG Xiang, XU Cheng-Gang, ZHANG Shan, SUN Li-Ying, TAN Xiao-Hong, JIANG Yu-Cheng, DOU Jia-Wei, WANG Lin-Jun. Photoelectrochemical properties of sputtered n-type CdTe thin films[J]. J. Infrared Millim. Waves,2022,41(4):659~667.]

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  • 收稿日期:2021-10-08
  • 最后修改日期:2022-08-14
  • 录用日期:2022-03-07
  • 在线发布日期: 2022-08-10
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