基于富铟团簇量子结构的双波长可调谐半导体激光器
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1.中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室,吉林 长春 130033;2.中国科学院大学 材料与光电研究中心,北京 100049;3.北京航空航天大学,北京 100191

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TN248.4

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Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure
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Affiliation:

1.State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.School of Physics, Beihang University, Beijing 100191, China

Fund Project:

Supported in part by the National Key Research and Development Program (2020YFC2200300), in part by the National Natural Science Foundation of China (11774343, 51672264, 61874119, 61874117), in part by the Science and Technology Development Project of Jilin Province (20200401006GX).

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    摘要:

    提出了一种采用增益芯片和光栅外腔的双波长可调谐半导体激光器。增益芯片采用了富铟团簇量子限制结构作为其量子限制结构,由于该结构独特的平顶增益特性,可以使激光器在双波长调谐范围内实现光强稳定。本研究中的谐振腔包括内部谐振腔和外部谐振腔,其中内部谐振腔由增益芯片的两个自然解理面构成,以支撑整个系统工作在特定波长。外部谐振腔由增益芯片的一个自然解理面和光栅构成,可实现969.1~977.9 nm的工作波长范围。最终该系统基于单个增益芯片和单个光栅实现了同步双波长输出,双波长的频率差在THz范围。本研究有望为实现双波长差频太赫兹源提供一种可能的解决方案。

    Abstract:

    We design and fabricate a double-wavelength tunable laser with a single grating structure using a single-gain chip. The gain chip adopts an indium-rich cluster quantum constraint structure, which can generate ultra-wide flat-top gain. The flat-top gain is the basis for producing a dual-wavelength laser with the same intensity. A grating is inserted into the exterior of the gain chip so that its resonator is composed of internal and external cavities. The internal cavity consists of two natural cleavage planes of the gain chip for oscillating the output laser at a fixed wavelength (974 nm). The tunable external cavity consists of a natural cleavage plane and a grating for the output laser at a tunable wavelength (969.1~977.9 nm). The laser structures of the single-gain chip and single grating can produce synchronous dual-wavelength output, which avoids a complicated optical path design. The frequency difference between the two wavelengths is in the terahertz band. Thus, the laser can be used as a dual-wavelength laser source to generate terahertz radiation.

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李雪,邰含旭,王玉龙,郑明,张建伟,张星,宁永强,吴坚,王立军.基于富铟团簇量子结构的双波长可调谐半导体激光器[J].红外与毫米波学报,2022,41(3):540~544]. LI Xue, TAI Han-Xu, WANG Yu-Hong, ZHENG Ming, ZHANG Jian-Wei, ZHANG Xing, NING Yong-Qiang, WU Jian, WANG Li-Jun. Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure[J]. J. Infrared Millim. Waves,2022,41(3):540~544.]

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  • 收稿日期:2021-10-01
  • 最后修改日期:2022-05-26
  • 录用日期:2021-11-24
  • 在线发布日期: 2022-05-20
  • 出版日期: