p-on-n长波、甚长波碲镉汞红外焦平面器件技术研究
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昆明物理研究所,昆明 650223

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红外专项项目(LZX20190302)


Research on p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors technology
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Kunming Institute of Physics, Kunming 650223

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Infrared Special Project (LZX20190302)

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    摘要:

    As注入掺杂的p-on-n结构具有暗电流小、R0A值高、少子寿命长等优点,是长波、甚长波碲镉汞红外焦平面器件发展的重要趋势。介绍了由昆明物理研究所研究制备的77 K温度下截止波长为9.5μm、10.1μm和71 K下14.97μm 的p-on-n长波、甚长波碲镉汞红外焦平面器件,对器件的响应率、NETD、暗电流及R0A等性能参数进行测试分析。测试结果表明,器件的有效像元率在99.78%~99.9%之间,器件的NETD均小于21 mK。实现了p-on-n长波、甚长波碲镉汞红外焦平面器件的有效制备。

    Abstract:

    The p-on-n structure doped with As implantation has the advantages of low dark current,high R0A product, and long minority carrier lifetime,which is an important trend in the development of long-wavelength and very long-wavelength HgCdTe infrared focal plane detectors. P-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors with cut-off wavelength of 9.5μm and 10.1μm at 77 K and 14.97 μm at 71 K fabricated by Kunming Institute of Physics are introduced.Test and analyze performance parameters such as the responsivity, NETD, dark current and R0A of the detectors. The test results show that the operable pixel factor of the detectors is between 99.78% and 99.9%,and the NETD of the detectors is less than 21 mK. The effective fabrication of p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors is realized.

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历史
  • 收稿日期:2021-09-06
  • 最后修改日期:2022-03-05
  • 录用日期:2021-10-09
  • 在线发布日期: 2022-02-28
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