1.中国科学院半导体研究所 材料重点实验室 北京市低维半导体材料与器件重点实验室,北京 100083;2.中国科学院大学 材料科学与光电技术学院,北京 100049;3.中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室,江苏 苏州 215123
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1.Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3.Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Supported by National Natural Science Foundation of China (61904175)
刘丽杰,赵有文,黄勇,赵宇,王俊,王应利,沈桂英,谢辉.面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备[J].红外与毫米波学报,2022,41(2):420~424]. LIU Li-Jie, ZHAO You-Wen, HUANG Yong, ZHAO Yu, WANG Jun, WANG Ying-Li, SHEN Gui-Ying, XIE Hui. Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD[J]. J. Infrared Millim. Waves,2022,41(2):420~424.]
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