0.825 THz砷化镓单片集成二次谐波混频器
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作者单位:

1.中国科学院国家空间科学中心 微波遥感技术重点实验室,北京100190;2.中国科学院大学,北京100049;3.南方科技大学,广东 深圳,518055

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中图分类号:

TN454;TN773.2

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0.825 THz GaAs monolithic integrated sub-harmonic mixer
Author:
Affiliation:

1.Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Southern University of Science and Technology, Shenzhen 518055, China

Fund Project:

Foundation tiem: Youth Innovation Promotion Association CAS (E1213A04)

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    摘要:

    基于国内的GaAs单片集成电路产线,研制了一款中心频率在0.825 THz的二次谐波单片混频器。针对肖特基二极管在太赫兹频段的高频效应详细分析了反向并联肖特基二极管的寄生参数以完善单片电路的设计。单片电路集成度高和装配误差小的特性更适用于太赫兹频段器件的设计。梁氏引线形式电路设计既可以降低介质基板带来的损耗,减小安装的位置偏移。实测结果表明, 0.825 THz单片混频器最佳单边带的插损值为28 dB,0.81到0.84 THz频率范围内插损小于33 dB。

    Abstract:

    A sub-harmonic monolithic mixer with a center frequency of 0.825 THz is developed based on GaAs monolithic microwave integrated circuit technology. The parasitic parameters of the anti-parallel Schottky diode at the terahertz frequency are analyzed to improve the circuit design. The monolithic circuit is suitable for terahertz devices with the characteristics of high integration and little fabrication deviation. Meanwhile, the beamlead circuit is used to reduce the loss of substrate and installation position offset. Measured results show that the single-sideband (SSB) conversion loss of the mixer is lower than 33 dB in the frequency range 0.81~0.84 THz, and the minimum SSB conversion loss is 28 dB.

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刘锶钰,张德海,孟进,纪广玉,朱皓天,侯晓翔,张青峰.0.825 THz砷化镓单片集成二次谐波混频器[J].红外与毫米波学报,2021,40(6):749~753]. LIU Si-Yu, ZHANG De-Hai, MENG Jin, JI Guang-Yu, ZHU Hao-Tian, HOU Xiao-Xiang, ZHANG Qing-Feng.0.825 THz GaAs monolithic integrated sub-harmonic mixer[J]. J. Infrared Millim. Waves,2021,40(6):749~753.]

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历史
  • 收稿日期:2021-03-09
  • 最后修改日期:2021-12-01
  • 录用日期:2021-04-20
  • 在线发布日期: 2021-11-29
  • 出版日期: