1.中国科学技术大学 纳米技术与纳米仿生学院，安徽 合肥 230026;2.中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室，江苏 苏州 215123
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1.Institute of Nano-Tech and Nano-Bionics， University of Science and Technology of China， Hefei 230026， China;2.Key Laboratory of Nano-devices and Applications， Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences， Suzhou 215123， China
Supported by the National High Technology Research and Development Program of China （2018YFB2003305）， the Key R&D Program of Jiangsu Province （ BE2018005）， the Science and Technology Service Network Initiative of the Chinese Academy of Sciences （KFJ-STS-ZDTP-086）， the Support From SINANO （Y8AAQ11003）， Natural Science Foundation of Jiangsu Province （BK20180252）Foundation items：GU Yu-Qiang（1995-），male， Taizhou China. Master， Research area focus on performance simulation and process preparation of avalanche photodiode. E-mail：yqgu2019@sinano.ac.cn
顾宇强,谭明,吴渊渊,卢建娅,李雪飞,陆书龙.具有优化倍增层InAlAs / InGaAs雪崩光电二极管[J].红外与毫米波学报,2021,40(6):715~720]. GU Yu-Qiang, TAN Ming, WU Yuan-Yuan, LU Jian-Ya, LI Xue-Fei, LU Shu-Long. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. J. Infrared Millim. Waves,2021,40(6):715~720.]
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