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首页 > 过刊浏览>2020年第39卷第1期 >56-64. DOI:10.11972/j.issn.1001-9014.2020.01.009
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基于65 nm标准CMOS工艺的3.0 THz 探测器
作者:
作者单位:

1.中国科学院半导体研究所 半导体超晶格国家重点实验室，北京 100083;2.中国科学院半导体研究所 半导体材料科学重点实验室，北京 100083;3.中国科学院大学 材料与光电研究中心，北京 100049

中图分类号:

TN386.1

基金项目:

国家重点研发计划资助 2016YFA0202200;中国科学院青年创新促进会计划 2016107;北京市科技计划项目 Z181100008918009国家重点研发计划资助（2016YFA0202200），中国科学院青年创新促进会计划（2016107），北京市科技计划项目（Z181100008918009）.


A 3.0 THz detector in 65 nm standard CMOS process
Author:
  • FANG Tong 1,3

    FANG Tong

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • LIU Li-Yuan 1,3

    LIU Li-Yuan

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • LIU Zhao-Yang 1,3

    LIU Zhao-Yang

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • FENG Peng 1,3

    FENG Peng

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • LI Yuan-Yuan 2,3

    LI Yuan-Yuan

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • LIU Jun-Qi 2,3

    LIU Jun-Qi

    Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • LIU Jian 1,3

    LIU Jian

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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  • WU Nan-Jian 1,3

    WU Nan-Jian

    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Affiliation:

1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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  • 摘要
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  • 参考文献 [36]
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    摘要:

    基于Dyakonov和Shur等离子体波振荡原理设计并流片制备了一种采用65 nm 标准CMOS工艺的3.0 THz探测器，探测器包括贴片天线、NMOS场效应晶体管、匹配网络及陷波滤波器。探测器在室温条件下可达到526 V/W的响应率（Rv）和73 pW/Hz1/2的噪声等效功率（NEP）。采用该探测器和步进电机搭建了太赫兹扫描成像系统，获得了太赫兹源出射光斑的远场形状，光斑的半高宽（FWHM）为240；并对聚甲醛牙签和树叶进行了扫描成像实验，结果表明CMOS太赫兹探测器在成像领域有潜在的应用前景。

    Abstract:

    A 3.0 THz detector based on plasma-wave theory proposed by Dyakonov and Shur was designed and fabricated in 65 nm standard CMOS process, the detector consists of a patch antenna, a NMOS field effect transistor, a matching network, and a notch filter, it can achieve a room-temperature responsivity （Rv） of 526 V/W and a noise equivalent power （NEP） of 73 pW/Hz1/2. The terahertz scanning imaging system was built with the detector and stepper motor, and the far-field shape of the terahertz source beam was obtained, the full width at half maximum （FWHM） of the beam is 240 μm; and the image of the polyformaldehyde toothpick and tree leaf were obtained through the scanning imaging system, it shows that CMOS terahertz detectors have potential applications in the imaging field.

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方桐,刘力源,刘朝阳,冯鹏,李媛媛,刘俊岐,刘剑,吴南健.基于65 nm标准CMOS工艺的3.0 THz 探测器[J].红外与毫米波学报,2020,39(1):56~64]. FANG Tong, LIU Li-Yuan, LIU Zhao-Yang, FENG Peng, LI Yuan-Yuan, LIU Jun-Qi, LIU Jian, WU Nan-Jian. A 3.0 THz detector in 65 nm standard CMOS process[J]. J. Infrared Millim. Waves,2020,39(1):56~64.]

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  • 收稿日期:2019-05-08
  • 最后修改日期:2019-12-17
  • 录用日期:2019-08-22
  • 在线发布日期: 2020-01-07
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