GaAs基短周期InAs/GaSb超晶格红外探测器研究
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TN304

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国家自然科学基金?


Research on short period InAs/GaSb superlattices photoconductors on GaAs substrates
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    摘要:

    采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML)和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2和57.3.室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率D·bb均超过2×108cmHz1/2/W.室温下短波探测器D·bb超过108cmHz1/2/W.

    Abstract:

    Two type II superlattices (SLs): InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the period of the two SLs was 33Å and 56Å. Room-temperature optical transmittance spectra showed clear absorption edge at ~2.1µm and ~5µm for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The 50% cutoff wavelength of the two photoconductors was 2.1µm and 5.0µm respectively. D*bb was above 5×108 cmHz1/2/W for two kinds of photoconductors at 77K. D*bb was 2×108 cmHz1/2/W for SWIR photoconductor at room temperature.

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郭杰. GaAs基短周期InAs/GaSb超晶格红外探测器研究[J].红外与毫米波学报,2009,28(3):]. guo jie. Research on short period InAs/GaSb superlattices photoconductors on GaAs substrates[J]. J. Infrared Millim. Waves,2009,28(3).]

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