室温短波碲镉汞结区的LBIC方法研究
DOI:
作者:
作者单位:

作者简介:

通讯作者:

中图分类号:

TN215 TP212.14

基金项目:

上海光科技专项基金资助(022261024)


STUDY ON THE JUNCTIONS OF SWIR HgCdTe PHOTO DIODES AT ROOM TEMPERATURE WITH LASER BEAM INDUCED CURRENT
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    室温短波碲镉汞焦平面技术在军事与航天工业上的应用越来越广泛,列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器,其有效光敏面面积扩大的问题越来越突出.我们利用激光诱导电流(LBIC)检测系统测试了室温短波碲镉汞n—on—p芯片的光响应分布,证实了有效光敏面扩大的存在.从实验结果看,结区的侧向扩散收集效应是造成目前常规工艺形成的光伏器件光敏面面积扩大的主要因素.

    Abstract:

    Short wavelength infrared (SWIR) focal plane arrays (FPAs) working at room temperature have many important military and cosmonautic applications. The dimensions of detectors in FPAs have gradually been reduced. Then the problem of the increase of effective optically sensitive area in photovoltaic detectors by conventional technology has been more thought of. The response of n-on-p HgCdTe photodiodes at 300K was measured by laser beam induced current(LBIC). From the results, we may see that the increase of effective optically sensitive area does exit, and the lateral diffusion of carriers to the junction periphery is the main reason.

    参考文献
    相似文献
    引证文献
引用本文

贾嘉 陈贵宾 龚海梅 李向阳.室温短波碲镉汞结区的LBIC方法研究[J].红外与毫米波学报,2005,24(1):11~14]. JIA Jia, CHEN Gui-Bin, GONG Hai-Mei, LI Xiang-Yang. STUDY ON THE JUNCTIONS OF SWIR HgCdTe PHOTO DIODES AT ROOM TEMPERATURE WITH LASER BEAM INDUCED CURRENT[J]. J. Infrared Millim. Waves,2005,24(1):11~14.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:
  • 最后修改日期:2004-01-10
  • 录用日期:
  • 在线发布日期:
  • 出版日期:
文章二维码